P-type tunneling FET on Si (110) substrate with anisotropic effect

Min-Hung Lee, C. Y. Kao, C. L. Yang, C. H. Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The promising potential of tunneling FETs (TFETs) for steep switch behavior with gate controlled band-to-band tunneling (BTBT) mechanism has attracted much attention for supply voltage (VDD) scaling and power consumption next generation CMOS [1, 2]. However, the challenge for TFETs is lower drive currents as compare with MOSFET due to a high conductance resistance while reverse bias. Tunneling FETs (TFETs) operates with band-to-band tunneling current that change with the channel potential more abruptly than thermionic emission current. In order to obtain high ION without sacrificing IOFF, and the high-k dielectric and metal gate are integrated as gate stack. To obtain high quality and avoid crystallizing of high-K layer, the gate last process was performed in this work. For N-TFET, much works have been reported on the SS improvement [4, 5]. For P-TFET, Bhuwalka et al. reported the ambipolar working of vertical TFET with negative gate bias, which obtain SS < 60mV/dec [6, 7]. In this work, we will demonstrate HK/MG (high-K/metal gate) P-TFET with the gate last process, and discuss the anisotropic effect on (110) substrate.

    Original languageEnglish
    Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
    Pages207-208
    Number of pages2
    DOIs
    Publication statusPublished - 2011 Dec 1
    Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
    Duration: 2011 Jun 202011 Jun 22

    Publication series

    NameDevice Research Conference - Conference Digest, DRC
    ISSN (Print)1548-3770

    Other

    Other69th Device Research Conference, DRC 2011
    CountryUnited States
    CitySanta Barbara, CA
    Period11/6/2011/6/22

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Lee, M-H., Kao, C. Y., Yang, C. L., & Lee, C. H. (2011). P-type tunneling FET on Si (110) substrate with anisotropic effect. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 207-208). [5994500] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994500