P-type tin-oxide thin film transistors for blue-light detection application

Po Chun Chen; Yu Chien Chiu; Zhi Wei Zheng; Chun Hu Cheng; Yung Hsien Wu

doi:10.1002/pssr.201600287

P-type tin-oxide thin film transistors for blue-light detection application

Po Chun Chen, Yu Chien Chiu, Zhi Wei Zheng^*, Chun Hu Cheng, Yung Hsien Wu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (I_light/I_dark) of 8.2 × 10³ at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

Original language	English
Pages (from-to)	919-923
Number of pages	5
Journal	Physica Status Solidi - Rapid Research Letters
Volume	10
Issue number	12
DOIs	https://doi.org/10.1002/pssr.201600287
Publication status	Published - 2016 Dec 1

Keywords

SnO
blue light
detection
p-type
thin film transistors

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1002/pssr.201600287

Cite this

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title = "P-type tin-oxide thin film transistors for blue-light detection application",

abstract = "We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).",

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T1 - P-type tin-oxide thin film transistors for blue-light detection application

AU - Chen, Po Chun

AU - Chiu, Yu Chien

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Wu, Yung Hsien

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N2 - We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

AB - We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (Figure presented.).

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KW - detection

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P-type tin-oxide thin film transistors for blue-light detection application

Abstract

Keywords

ASJC Scopus subject areas

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