P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

M. H. Lee; S. H. Lu; S. T. Chang; M. Tang; J. J. Huang; K. Y. Ho; Y. S. Huang; C. C. Lee

doi:10.1889/1.3500146

P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

M. H. Lee^*
, S. H. Lu
, S. T. Chang
, M. Tang
, J. J. Huang
, K. Y. Ho
, Y. S. Huang
, C. C. Lee

^*Corresponding author for this work

Institute and Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.

Original language	English
Pages (from-to)	1636-1639
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	41 1
DOIs	https://doi.org/10.1889/1.3500146
Publication status	Published - 2010 May

ASJC Scopus subject areas

General Engineering

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10.1889/1.3500146

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abstract = "The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.",

author = "Lee, \{M. H.\} and Lu, \{S. H.\} and Chang, \{S. T.\} and M. Tang and Huang, \{J. J.\} and Ho, \{K. Y.\} and Huang, \{Y. S.\} and Lee, \{C. C.\}",

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AU - Lee, M. H.

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AU - Chang, S. T.

AU - Tang, M.

AU - Huang, J. J.

AU - Ho, K. Y.

AU - Huang, Y. S.

AU - Lee, C. C.

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AB - The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.

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P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

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