P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

M. H. Lee, S. H. Lu, S. T. Chang, M. Tang, J. J. Huang, K. Y. Ho, Y. S. Huang, C. C. Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.

    Original languageEnglish
    Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
    Pages1636-1639
    Number of pages4
    Publication statusPublished - 2010 Dec 1
    Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
    Duration: 2010 May 232010 May 28

    Publication series

    Name48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
    Volume3

    Other

    Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
    CountryUnited States
    CitySeattle, WA
    Period2010/05/232010/05/28

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Information Systems

    Fingerprint Dive into the research topics of 'P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates'. Together they form a unique fingerprint.

    Cite this