P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

M. H. Lee, S. H. Lu, S. T. Chang, M. Tang, J. J. Huang, K. Y. Ho, Y. S. Huang, C. C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages1636-1639
Number of pages4
Publication statusPublished - 2010 Dec 1
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 2010 May 232010 May 28

Publication series

Name48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Volume3

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period10/5/2310/5/28

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Information Systems

Cite this

Lee, M. H., Lu, S. H., Chang, S. T., Tang, M., Huang, J. J., Ho, K. Y., Huang, Y. S., & Lee, C. C. (2010). P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (pp. 1636-1639). (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010; Vol. 3).