P-103

Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

M. H. Lee, S. H. Lu, S. T. Chang, M. Tang, J. J. Huang, K. Y. Ho, Y. S. Huang, C. C. Lee

    Research output: Contribution to journalArticle

    Abstract

    The disordered bonds of a-Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a-Si:H TFTs array backplanes.

    Original languageEnglish
    Pages (from-to)1636-1639
    Number of pages4
    JournalDigest of Technical Papers - SID International Symposium
    Volume41 1
    Publication statusPublished - 2010 May 1

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    Flexible displays
    Drain current
    Substrates
    Costs

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    P-103 : Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates. / Lee, M. H.; Lu, S. H.; Chang, S. T.; Tang, M.; Huang, J. J.; Ho, K. Y.; Huang, Y. S.; Lee, C. C.

    In: Digest of Technical Papers - SID International Symposium, Vol. 41 1, 01.05.2010, p. 1636-1639.

    Research output: Contribution to journalArticle

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    AU - Tang, M.

    AU - Huang, J. J.

    AU - Ho, K. Y.

    AU - Huang, Y. S.

    AU - Lee, C. C.

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