TY - GEN
T1 - Oxide roughness enhanced reliability of MOS tunneling diodes
AU - Lin, C. H.
AU - Lee, M. H.
AU - Hsu, B. C.
AU - Chen, K. F.
AU - Shie, C. R.
AU - Liu, C. W.
N1 - Publisher Copyright:
© 2001 ISDRS-Univ of Maryland.
PY - 2001
Y1 - 2001
N2 - In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO2 interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices.
AB - In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO2 interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices.
UR - http://www.scopus.com/inward/record.url?scp=84961817129&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961817129&partnerID=8YFLogxK
U2 - 10.1109/ISDRS.2001.984435
DO - 10.1109/ISDRS.2001.984435
M3 - Conference contribution
AN - SCOPUS:84961817129
T3 - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
SP - 46
EP - 49
BT - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Semiconductor Device Research Symposium, ISDRS 2001
Y2 - 5 December 2001 through 7 December 2001
ER -