Oxide roughness enhanced reliability of MOS tunneling diodes

C. H. Lin; M. H. Lee; B. C. Hsu; K. F. Chen; C. R. Shie; C. W. Liu

doi:10.1109/ISDRS.2001.984435

Oxide roughness enhanced reliability of MOS tunneling diodes

C. H. Lin, M. H. Lee, B. C. Hsu, K. F. Chen, C. R. Shie, C. W. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO₂ interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices.

Original language	English
Title of host publication	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	46-49
Number of pages	4
ISBN (Electronic)	0780374320, 9780780374324
DOIs	https://doi.org/10.1109/ISDRS.2001.984435
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	International Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States Duration: 2001 Dec 5 → 2001 Dec 7

Publication series

Name	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2001
Country	United States
City	Washington
Period	01/12/5 → 01/12/7

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2001.984435

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Lin, C. H., Lee, M. H., Hsu, B. C., Chen, K. F., Shie, C. R., & Liu, C. W. (2001). Oxide roughness enhanced reliability of MOS tunneling diodes. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 46-49). [984435] (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984435

Oxide roughness enhanced reliability of MOS tunneling diodes. / Lin, C. H.; Lee, M. H.; Hsu, B. C.; Chen, K. F.; Shie, C. R.; Liu, C. W.

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2001. p. 46-49 984435 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CH, Lee, MH, Hsu, BC, Chen, KF, Shie, CR & Liu, CW 2001, Oxide roughness enhanced reliability of MOS tunneling diodes. in 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings., 984435, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 46-49, International Semiconductor Device Research Symposium, ISDRS 2001, Washington, United States, 01/12/5. https://doi.org/10.1109/ISDRS.2001.984435

Lin CH, Lee MH, Hsu BC, Chen KF, Shie CR, Liu CW. Oxide roughness enhanced reliability of MOS tunneling diodes. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 46-49. 984435. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). https://doi.org/10.1109/ISDRS.2001.984435

Lin, C. H. ; Lee, M. H. ; Hsu, B. C. ; Chen, K. F. ; Shie, C. R. ; Liu, C. W. / Oxide roughness enhanced reliability of MOS tunneling diodes. 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 46-49 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

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abstract = "In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO2 interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices.",

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