Oxide roughness enhanced reliability of MOS tunneling diodes

C. H. Lin, M. H. Lee, B. C. Hsu, K. F. Chen, C. R. Shie, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO2 interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices.

Original languageEnglish
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages46-49
Number of pages4
ISBN (Electronic)0780374320, 9780780374324
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: 2001 Dec 52001 Dec 7

Publication series

Name2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2001
CountryUnited States
CityWashington
Period01/12/501/12/7

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lin, C. H., Lee, M. H., Hsu, B. C., Chen, K. F., Shie, C. R., & Liu, C. W. (2001). Oxide roughness enhanced reliability of MOS tunneling diodes. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 46-49). [984435] (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984435