Overview on ESD protection designs of low-parasitic capacitance for RF ICs in CMOS technologies

Ming Dou Ker, Chun-Yu Lin, Yuan Wen Hsiao

Research output: Contribution to journalReview article

44 Citations (Scopus)

Abstract

CMOS technology has been widely used to implement radio-frequency integrated circuits (RF ICs). However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness of RF ICs. Therefore, on-chip ESD protection designs must be added at all input/output pads in RF circuits against ESD damages. To minimize the impacts from ESD protection circuit on RF performances, ESD protection circuit at input/output pads must be carefully designed. An overview on ESD protection designs with low parasitic capacitance for RF circuits in CMOS technology is presented in this paper. The comparisons among these ESD protection designs are also discussed. With the reduced parasitic capacitance, ESD protection circuit can be easily combined or co-designed with RF circuits. As the operating frequencies of RF circuits increase, on-chip ESD protection designs for RF applications will continuously be an important design task.

Original languageEnglish
Article number5688227
Pages (from-to)207-218
Number of pages12
JournalIEEE Transactions on Device and Materials Reliability
Volume11
Issue number2
DOIs
Publication statusPublished - 2011 Jun 1

Fingerprint

Electrostatic discharge
Integrated circuits
Capacitance
Networks (circuits)
Oxides

Keywords

  • ESD protection circuits
  • Electrostatic discharge (ESD)
  • low capacitance
  • radio-frequency integrated circuit (RF IC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

Overview on ESD protection designs of low-parasitic capacitance for RF ICs in CMOS technologies. / Ker, Ming Dou; Lin, Chun-Yu; Hsiao, Yuan Wen.

In: IEEE Transactions on Device and Materials Reliability, Vol. 11, No. 2, 5688227, 01.06.2011, p. 207-218.

Research output: Contribution to journalReview article

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