Origin of traps and charge transport mechanism in hafnia

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.

Original languageEnglish
Article number222901
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2014 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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