Origin of traps and charge transport mechanism in hafnia

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.4903169

Origin of traps and charge transport mechanism in hafnia

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO₂. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO₂ was determined based on the charge transport experiments.

Original language	English
Article number	222901
Journal	Applied Physics Letters
Volume	105
Issue number	22
DOIs	https://doi.org/10.1063/1.4903169
Publication status	Published - 2014 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4903169

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abstract = "In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.",

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AB - In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.

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Origin of traps and charge transport mechanism in hafnia

Abstract

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