Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells

C. W. Chang; H. C. Yang; C. H. Chen; H. J. Chang; Y. F. Chen

doi:10.1063/1.1350416

Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells

C. W. Chang^*, H. C. Yang, C. H. Chen, H. J. Chang, Y. F. Chen

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, I_ppc(t)=I_ppc(0)exp[-(t/τ)^β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.

Original language	English
Pages (from-to)	3725-3729
Number of pages	5
Journal	Journal of Applied Physics
Volume	89
Issue number	7
DOIs	https://doi.org/10.1063/1.1350416
Publication status	Published - 2001 Apr 1

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1350416

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title = "Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells",

abstract = "Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ)β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.",

author = "Chang, {C. W.} and Yang, {H. C.} and Chen, {C. H.} and Chang, {H. J.} and Chen, {Y. F.}",

year = "2001",

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T1 - Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells

AU - Chang, C. W.

AU - Yang, H. C.

AU - Chen, C. H.

AU - Chang, H. J.

AU - Chen, Y. F.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ)β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.

AB - Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ)β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.

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Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells

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