Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells

C. W. Chang, H. C. Yang, C. H. Chen, H. J. Chang, Y. F. Chen

Research output: Contribution to journalArticle

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Abstract

Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ)β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.

Original languageEnglish
Pages (from-to)3725-3729
Number of pages5
JournalJournal of Applied Physics
Volume89
Issue number7
DOIs
Publication statusPublished - 2001 Apr 1

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photoconductivity
quantum wells
exponential functions
barrier layers
photoexcitation
molecular beam epitaxy
photoluminescence
impurities
temperature dependence
energy
defects
kinetics
photons
decay
excitation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chang, C. W., Yang, H. C., Chen, C. H., Chang, H. J., & Chen, Y. F. (2001). Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells. Journal of Applied Physics, 89(7), 3725-3729. https://doi.org/10.1063/1.1350416

Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells. / Chang, C. W.; Yang, H. C.; Chen, C. H.; Chang, H. J.; Chen, Y. F.

In: Journal of Applied Physics, Vol. 89, No. 7, 01.04.2001, p. 3725-3729.

Research output: Contribution to journalArticle

Chang, CW, Yang, HC, Chen, CH, Chang, HJ & Chen, YF 2001, 'Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells', Journal of Applied Physics, vol. 89, no. 7, pp. 3725-3729. https://doi.org/10.1063/1.1350416
Chang, C. W. ; Yang, H. C. ; Chen, C. H. ; Chang, H. J. ; Chen, Y. F. / Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells. In: Journal of Applied Physics. 2001 ; Vol. 89, No. 7. pp. 3725-3729.
@article{9e1d2131f6e44de5861ee7bb1ff538c3,
title = "Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells",
abstract = "Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ)β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.",
author = "Chang, {C. W.} and Yang, {H. C.} and Chen, {C. H.} and Chang, {H. J.} and Chen, {Y. F.}",
year = "2001",
month = "4",
day = "1",
doi = "10.1063/1.1350416",
language = "English",
volume = "89",
pages = "3725--3729",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells

AU - Chang, C. W.

AU - Yang, H. C.

AU - Chen, C. H.

AU - Chang, H. J.

AU - Chen, Y. F.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ)β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.

AB - Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ)β], (0<β<1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs.

UR - http://www.scopus.com/inward/record.url?scp=0035309187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035309187&partnerID=8YFLogxK

U2 - 10.1063/1.1350416

DO - 10.1063/1.1350416

M3 - Article

AN - SCOPUS:0035309187

VL - 89

SP - 3725

EP - 3729

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -