Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, S. C. Chang

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Cu2O thin films were first deposited using magnetron sputtering at 200 °C. The samples produced were then annealed by a rapid thermal annealing (RTA) system at 550 °C in a protective atmosphere with or without the addition of oxygen. After annealing, various Cu2O and CuO films were formed. These films were characterized, as a function of oxygen concentration in RTA, using UV-VIS photometer, four-point probe, and Hall measurement system. The results show that these Cu2O thin films annealed at 550 °C with more than 1.2% oxygen added in the protective argon atmosphere would transform into the CuO phase. Apparently, the results of RTA are sensitive to the amount of oxygen added in the protective atmosphere. The resistivity of these Cu2O thin films decreases with the increase in the oxygen amount in the annealing atmosphere, most likely due to the increase in carrier mobility. In addition, Cu2O/ZnO (doped with AlSc) junctions were produced at 200 °C and annealed. The rectifying effect of P-N junction disappeared after annealing, probably due to the damage of p-n interface, which directly causes current leakage at the junction.

Original languageEnglish
Pages (from-to)5449-5453
Number of pages5
JournalThin Solid Films
Volume516
Issue number16
DOIs
Publication statusPublished - 2008 Jun 30

Keywords

  • Cuprous oxide
  • Opto-electronic properties
  • Rapid thermal annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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