Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits

Chun Yu Lin; Ming Dou Ker

doi:10.1109/IPFA.2008.4588154

Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits

Chun Yu Lin^*, Ming Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low capacitance (low-C) design on ESD protection device is a solution to mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device. Silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs due to the smaller layout area and small parasitic capacitance under the same ESD robustness. In this paper, the modified lateral SCR (MLSCR) realized in waffle layout structure is studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the minimized parasitic capacitance, the degradation on RF circuit performance due to ESD protection devices can be reduced. The waffle MLSCR with low parasitic capacitance is suitable for on-chip ESD protection in UWB RF ICs. Besides, the turn-on speed of MLSCR with waffle layout structure is verified to be better than that with conventional stripe structure.

Original language	English
Title of host publication	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2008.4588154
Publication status	Published - 2008
Externally published	Yes
Event	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: 2008 Jul 7 → 2008 Jul 11

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Other

Other	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/Territory	Singapore
City	Singapore
Period	2008/07/07 → 2008/07/11

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IPFA.2008.4588154

Cite this

Lin, C. Y., & Ker, M. D. (2008). Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA Article 4588154 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2008.4588154

Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits. / Lin, Chun Yu; Ker, Ming Dou.
2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588154 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY & Ker, MD 2008, Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits. in 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA., 4588154, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore, 2008/07/07. https://doi.org/10.1109/IPFA.2008.4588154

Lin CY, Ker MD. Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588154. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2008.4588154

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abstract = "Low capacitance (low-C) design on ESD protection device is a solution to mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device. Silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs due to the smaller layout area and small parasitic capacitance under the same ESD robustness. In this paper, the modified lateral SCR (MLSCR) realized in waffle layout structure is studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the minimized parasitic capacitance, the degradation on RF circuit performance due to ESD protection devices can be reduced. The waffle MLSCR with low parasitic capacitance is suitable for on-chip ESD protection in UWB RF ICs. Besides, the turn-on speed of MLSCR with waffle layout structure is verified to be better than that with conventional stripe structure.",

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AB - Low capacitance (low-C) design on ESD protection device is a solution to mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device. Silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs due to the smaller layout area and small parasitic capacitance under the same ESD robustness. In this paper, the modified lateral SCR (MLSCR) realized in waffle layout structure is studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the minimized parasitic capacitance, the degradation on RF circuit performance due to ESD protection devices can be reduced. The waffle MLSCR with low parasitic capacitance is suitable for on-chip ESD protection in UWB RF ICs. Besides, the turn-on speed of MLSCR with waffle layout structure is verified to be better than that with conventional stripe structure.

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Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits

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