Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits

Chun-Yu Lin, Ming Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low capacitance (low-C) design on ESD protection device is a solution to mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device. Silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs due to the smaller layout area and small parasitic capacitance under the same ESD robustness. In this paper, the modified lateral SCR (MLSCR) realized in waffle layout structure is studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the minimized parasitic capacitance, the degradation on RF circuit performance due to ESD protection devices can be reduced. The waffle MLSCR with low parasitic capacitance is suitable for on-chip ESD protection in UWB RF ICs. Besides, the turn-on speed of MLSCR with waffle layout structure is verified to be better than that with conventional stripe structure.

Original languageEnglish
Title of host publication2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs
Publication statusPublished - 2008 Sep 23
Event2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore
Duration: 2008 Jul 72008 Jul 11

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Other

Other2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
CountrySingapore
CitySingapore
Period08/7/708/7/11

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lin, C-Y., & Ker, M. D. (2008). Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA [4588154] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2008.4588154