INIS
deposition
25%
design
75%
doped materials
100%
electrical resistivity
50%
films
25%
gallium
100%
levels
25%
optimization
100%
performance
25%
power
75%
prediction
75%
radiowave radiation
100%
range
25%
sputtering
25%
substrates
25%
thin films
100%
zinc oxides
100%
Physics
Arrays
25%
Deposition
25%
Electrical Resistivity
50%
Frequencies
100%
Gallium
100%
Independent Variables
75%
Magnetron Sputtering
25%
Optimization
100%
Oxide
25%
Parameter
25%
Performance
25%
Pressure
75%
Revisions
25%
Substrates
25%
Taguchi Methods
25%
Temperature
25%
Thin Films
100%
Transmittance
50%
ZnO
100%
Material Science
Electrical Resistivity
100%
Gallium
100%
Magnetron Sputtering
50%
Taguchi Method
50%
Temperature
50%
Thin Films
100%
Zinc Oxide
50%
ZnO
100%