@inproceedings{c6980d785d504846bb67e656baed19f1,
title = "Optimization of BiFeO3MFIS capacitors doped niobium by using Taguchi method",
abstract = "In this study,MFIS (Metal/Ferroelectric/Insulator/Semiconductor) capacitors whose structure is Al/BFO+Nb/HfO2/p-Si are investigatedby using Taguchi Method. The effects of leakage current, memory window, and signal-to-noise ratio (S/N ratio) are discussed by different process conditions. As a result, the leakage current and memory window indicate the better performance on th same process condition. The better conditions of this MFIS capacitoroccur in rapid thermal annealing (RTA) at 700 ° C, 5W direct current (DC)power of Nb sputtering and 15 of argon-to-oxygen ratio for laekage current and memory window.Oxygen vacancies were reduced bydoping niobium (Nb) that Nb ions replace ferrum (Fe) ions with RTA at 700°C. The more Nb dopesthe more Nb ions replace Fe ions. Butthe excessive Nb induces to increase the leakage current and reduce the memory widow.",
keywords = "BiFeO, MFIS capacitors, Memory window, Taguchi method",
author = "Lin, {K. C.} and Ko, {C. H.} and Twu, {M. J.} and Juan, {P. C.} and H. Sekiguchi and Chou, {C. H.}",
year = "2014",
doi = "10.4028/www.scientific.net/AMM.481.141",
language = "English",
isbn = "9783037859681",
series = "Applied Mechanics and Materials",
pages = "141--145",
booktitle = "Quantum, Nano, Micro Technologies and Applied Researches",
note = "2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 ; Conference date: 01-12-2013 Through 02-12-2013",
}