Optimization of BiFeO3MFIS capacitors doped niobium by using Taguchi method

K. C. Lin, C. H. Ko, M. J. Twu, P. C. Juan, H. Sekiguchi, C. H. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this study,MFIS (Metal/Ferroelectric/Insulator/Semiconductor) capacitors whose structure is Al/BFO+Nb/HfO2/p-Si are investigatedby using Taguchi Method. The effects of leakage current, memory window, and signal-to-noise ratio (S/N ratio) are discussed by different process conditions. As a result, the leakage current and memory window indicate the better performance on th same process condition. The better conditions of this MFIS capacitoroccur in rapid thermal annealing (RTA) at 700 ° C, 5W direct current (DC)power of Nb sputtering and 15 of argon-to-oxygen ratio for laekage current and memory window.Oxygen vacancies were reduced bydoping niobium (Nb) that Nb ions replace ferrum (Fe) ions with RTA at 700°C. The more Nb dopesthe more Nb ions replace Fe ions. Butthe excessive Nb induces to increase the leakage current and reduce the memory widow.

Original languageEnglish
Title of host publicationQuantum, Nano, Micro Technologies and Applied Researches
Number of pages5
Publication statusPublished - 2014
Externally publishedYes
Event2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 - , Singapore
Duration: 2013 Dec 12013 Dec 2

Publication series

NameApplied Mechanics and Materials
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482


Other2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013


  • BiFeO
  • MFIS capacitors
  • Memory window
  • Taguchi method

ASJC Scopus subject areas

  • Engineering(all)


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