Optical quenching of the photoconductivity in n-type GaN

T. Y. Lin*, H. C. Yang, Y. F. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


Results of optical quenching of photoconductivity measurements in undoped n-type and Se-doped GaN epitaxial thin films are presented. The spectral distribution of quenching phenomena shows a broadband centered around 1.26 eV. Transient changes in photoconductivity on application or removal of the quenching radiation are shown to exhibit a metastable behavior. The results reveal that the origin of the optical quenching phenomena is closely related to the defects corresponding to the persistent photoconductivity effects and the yellow luminescence band observed in most n-type GaN. In addition, this result indicates that these defects can have multiple charge states. It is found that the quenching ratio increases with increasing Se-doping concentration. We point out that the origin of the defects responsible for the optical quenching can be attributed to nitrogen antisite and/or Ga vacancy.

Original languageEnglish
Pages (from-to)3404-3408
Number of pages5
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 2000 Apr

ASJC Scopus subject areas

  • General Physics and Astronomy


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