Optical properties of Zn1-xMnxSe epilayers grown by molecular beam epitaxy

W. C. Chou; C. S. Ro; D. Y. Hong; C. S. Yang; C. Y. Lin; T. Y. Lin; K. C. Chiu; T. R. Yang; C. M. Lin; D. S. Chuu; W. Y. Uen

Optical properties of Zn_1-xMn_xSe epilayers grown by molecular beam epitaxy

W. C. Chou^*, C. S. Ro, D. Y. Hong, C. S. Yang, C. Y. Lin, T. Y. Lin, K. C. Chiu, T. R. Yang, C. M. Lin, D. S. Chuu, W. Y. Uen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Zn_1-xMn_xSe (x ≤ 0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [010] by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn_1-xMn_rSe (0 ≤ x ≤ 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type 1b instead of type 1c. The force constants F_MnSe = 2.81 × 10⁶ amu·cm^-2 and F_ZnSe = 3.96 × 10⁶ amu·cm^-2 were obtained.

Original language	English
Pages (from-to)	120-127
Number of pages	8
Journal	Chinese Journal of Physics
Volume	36
Issue number	2
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

@article{c2fe0d8b6d2540fe87ac283cc2f8535c,

title = "Optical properties of Zn1-xMnxSe epilayers grown by molecular beam epitaxy",

abstract = "Zn1-xMnxSe (x ≤ 0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [010] by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn1-xMnrSe (0 ≤ x ≤ 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type 1b instead of type 1c. The force constants FMnSe = 2.81 × 106 amu·cm-2 and FZnSe = 3.96 × 106 amu·cm-2 were obtained.",

author = "Chou, {W. C.} and Ro, {C. S.} and Hong, {D. Y.} and Yang, {C. S.} and Lin, {C. Y.} and Lin, {T. Y.} and Chiu, {K. C.} and Yang, {T. R.} and Lin, {C. M.} and Chuu, {D. S.} and Uen, {W. Y.}",

year = "1998",

language = "English",

volume = "36",

pages = "120--127",

journal = "Chinese Journal of Physics",

issn = "0577-9073",

publisher = "Physical Society of the Republic of China",

number = "2",

}

TY - JOUR

T1 - Optical properties of Zn1-xMnxSe epilayers grown by molecular beam epitaxy

AU - Chou, W. C.

AU - Ro, C. S.

AU - Hong, D. Y.

AU - Yang, C. S.

AU - Lin, C. Y.

AU - Lin, T. Y.

AU - Chiu, K. C.

AU - Yang, T. R.

AU - Lin, C. M.

AU - Chuu, D. S.

AU - Uen, W. Y.

PY - 1998

Y1 - 1998

N2 - Zn1-xMnxSe (x ≤ 0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [010] by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn1-xMnrSe (0 ≤ x ≤ 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type 1b instead of type 1c. The force constants FMnSe = 2.81 × 106 amu·cm-2 and FZnSe = 3.96 × 106 amu·cm-2 were obtained.

AB - Zn1-xMnxSe (x ≤ 0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [010] by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn1-xMnrSe (0 ≤ x ≤ 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type 1b instead of type 1c. The force constants FMnSe = 2.81 × 106 amu·cm-2 and FZnSe = 3.96 × 106 amu·cm-2 were obtained.

UR - http://www.scopus.com/inward/record.url?scp=0000003101&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000003101&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000003101

SN - 0577-9073

VL - 36

SP - 120

EP - 127

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 2

ER -

Optical properties of Zn_1-xMn_xSe epilayers grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

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