Optical properties of Si-doped GaN films

H. C. Yang, T. Y. Lin, M. Y. Huang, Y. F. Chen

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Abstract

Results of the front-side and back-side photoluminescence (PL) measurements in a set of Si-doped GaN epifilms are presented. From the back-side PL spectrum, the enhancement of the yellow emission implies that most of the intrinsic defects responsible for the yellow band exist mainly near the interface between the buffer layer and the epilayer. We also found that the intensity of the yellow luminescence decreases with increasing Si dopants, which is consistent with the fact that the microscopic origin of the yellow emission can be attributed to gallium vacancies VGa. In additions, our investigations reveal that the potential fluctuations, that give rise to the effect of band-gap narrowing and linewidth broadening, are mainly caused by randomly distributed doping impurities instead of other defects.

Original languageEnglish
Pages (from-to)6124-6127
Number of pages4
JournalJournal of Applied Physics
Volume86
Issue number11
DOIs
Publication statusPublished - 1999 Dec

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yang, H. C., Lin, T. Y., Huang, M. Y., & Chen, Y. F. (1999). Optical properties of Si-doped GaN films. Journal of Applied Physics, 86(11), 6124-6127. https://doi.org/10.1063/1.371662