Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers

Cheng Yuan Chen; Jia Ren Lee; Chien Rong Lu; Hsiang Lin Liu; Li Wen Sun; Hao Hsiung Lin

doi:10.1016/j.jpcs.2007.07.033

Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers

Cheng Yuan Chen, Jia Ren Lee, Chien Rong Lu^*, Hsiang Lin Liu, Li Wen Sun, Hao Hsiung Lin

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The modulated optical responses of InGaNAs/GaAs quantum well structures were characterized by photoreflectance spectroscopy. The quantum well excitonic interband transitions were observed in the spectral range above hν=E_g (InGaNAs). When the InGaNAs well is sandwiched in between GaNAs strain relief buffer layers, the quantum confinement potential becomes one step wider and increases the number of quantum states in the system. The quantum well subband energies and wave functions were calculated numerically to compare with the major optical features. The modulated optical responses are enhanced, especially for those quantum states with wave function extending into GaNAs and GaAs barriers where interface space charges induce strong internal field and enhance the electro-modulation efficiency.

Original language	English
Pages (from-to)	493-496
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	69
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jpcs.2007.07.033
Publication status	Published - 2008 Feb

Keywords

A. Quantum well
A. Semiconductors
D. Optical properties

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.jpcs.2007.07.033

Cite this

@article{d304b35d49cf4329990f14aaedc93c7a,

title = "Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers",

abstract = "The modulated optical responses of InGaNAs/GaAs quantum well structures were characterized by photoreflectance spectroscopy. The quantum well excitonic interband transitions were observed in the spectral range above hν=Eg (InGaNAs). When the InGaNAs well is sandwiched in between GaNAs strain relief buffer layers, the quantum confinement potential becomes one step wider and increases the number of quantum states in the system. The quantum well subband energies and wave functions were calculated numerically to compare with the major optical features. The modulated optical responses are enhanced, especially for those quantum states with wave function extending into GaNAs and GaAs barriers where interface space charges induce strong internal field and enhance the electro-modulation efficiency.",

keywords = "A. Quantum well, A. Semiconductors, D. Optical properties",

author = "Chen, {Cheng Yuan} and Lee, {Jia Ren} and Lu, {Chien Rong} and Liu, {Hsiang Lin} and Sun, {Li Wen} and Lin, {Hao Hsiung}",

note = "Funding Information: Financial supports from National Science Council and Taiwan Normal University are gratefully acknowledged.",

year = "2008",

month = feb,

doi = "10.1016/j.jpcs.2007.07.033",

language = "English",

volume = "69",

pages = "493--496",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "2-3",

}

TY - JOUR

T1 - Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers

AU - Chen, Cheng Yuan

AU - Lee, Jia Ren

AU - Lu, Chien Rong

AU - Liu, Hsiang Lin

AU - Sun, Li Wen

AU - Lin, Hao Hsiung

N1 - Funding Information: Financial supports from National Science Council and Taiwan Normal University are gratefully acknowledged.

PY - 2008/2

Y1 - 2008/2

N2 - The modulated optical responses of InGaNAs/GaAs quantum well structures were characterized by photoreflectance spectroscopy. The quantum well excitonic interband transitions were observed in the spectral range above hν=Eg (InGaNAs). When the InGaNAs well is sandwiched in between GaNAs strain relief buffer layers, the quantum confinement potential becomes one step wider and increases the number of quantum states in the system. The quantum well subband energies and wave functions were calculated numerically to compare with the major optical features. The modulated optical responses are enhanced, especially for those quantum states with wave function extending into GaNAs and GaAs barriers where interface space charges induce strong internal field and enhance the electro-modulation efficiency.

AB - The modulated optical responses of InGaNAs/GaAs quantum well structures were characterized by photoreflectance spectroscopy. The quantum well excitonic interband transitions were observed in the spectral range above hν=Eg (InGaNAs). When the InGaNAs well is sandwiched in between GaNAs strain relief buffer layers, the quantum confinement potential becomes one step wider and increases the number of quantum states in the system. The quantum well subband energies and wave functions were calculated numerically to compare with the major optical features. The modulated optical responses are enhanced, especially for those quantum states with wave function extending into GaNAs and GaAs barriers where interface space charges induce strong internal field and enhance the electro-modulation efficiency.

KW - A. Quantum well

KW - A. Semiconductors

KW - D. Optical properties

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UR - http://www.scopus.com/inward/citedby.url?scp=38749141758&partnerID=8YFLogxK

U2 - 10.1016/j.jpcs.2007.07.033

DO - 10.1016/j.jpcs.2007.07.033

M3 - Article

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SN - 0022-3697

VL - 69

SP - 493

EP - 496

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 2-3

ER -

Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers

Abstract

Keywords

ASJC Scopus subject areas

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