Optical properties of GaNAs/GaAs triple quantum well structures

Yo Yu Chen; Jia Ren Lee; Meng Luan Weng; Chien Rong Lu; Bing Ruey Wu; Wen Jeng Ho

doi:10.1016/j.jpcs.2004.06.016

Optical properties of GaNAs/GaAs triple quantum well structures

Yo Yu Chen, Jia Ren Lee, Meng Luan Weng, Chien Rong Lu^*, Bing Ruey Wu, Wen Jeng Ho

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E _g(GaN_xAs_1-x). A matrix transfer algorithm was used to match the GaN_xAs_1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

Original language	English
Pages (from-to)	1857-1860
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	65
Issue number	11
DOIs	https://doi.org/10.1016/j.jpcs.2004.06.016
Publication status	Published - 2004 Nov

Keywords

A. Quantum wells
A. Semiconductors
D. Luminescence
D. Optical properties

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

Access to Document

10.1016/j.jpcs.2004.06.016

Cite this

@article{cdb43f748f6a4e6191082fba298fbb02,

title = "Optical properties of GaNAs/GaAs triple quantum well structures",

abstract = "Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.",

keywords = "A. Quantum wells, A. Semiconductors, D. Luminescence, D. Optical properties",

author = "Chen, {Yo Yu} and Lee, {Jia Ren} and Weng, {Meng Luan} and Lu, {Chien Rong} and Wu, {Bing Ruey} and Ho, {Wen Jeng}",

note = "Funding Information: Financial support from National Science Council and Taiwan Normal University is gratefully acknowledged.",

year = "2004",

month = nov,

doi = "10.1016/j.jpcs.2004.06.016",

language = "English",

volume = "65",

pages = "1857--1860",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Optical properties of GaNAs/GaAs triple quantum well structures

AU - Chen, Yo Yu

AU - Lee, Jia Ren

AU - Weng, Meng Luan

AU - Lu, Chien Rong

AU - Wu, Bing Ruey

AU - Ho, Wen Jeng

N1 - Funding Information: Financial support from National Science Council and Taiwan Normal University is gratefully acknowledged.

PY - 2004/11

Y1 - 2004/11

N2 - Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

AB - Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

KW - A. Quantum wells

KW - A. Semiconductors

KW - D. Luminescence

KW - D. Optical properties

UR - http://www.scopus.com/inward/record.url?scp=4944240090&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944240090&partnerID=8YFLogxK

U2 - 10.1016/j.jpcs.2004.06.016

DO - 10.1016/j.jpcs.2004.06.016

M3 - Article

AN - SCOPUS:4944240090

SN - 0022-3697

VL - 65

SP - 1857

EP - 1860

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 11

ER -

Optical properties of GaNAs/GaAs triple quantum well structures

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this