Optical properties of GaNAs/GaAs triple quantum well structures

Yo Yu Chen, Jia Ren Lee, Meng Luan Weng, Chien Rong Lu*, Bing Ruey Wu, Wen Jeng Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

Original languageEnglish
Pages (from-to)1857-1860
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Issue number11
Publication statusPublished - 2004 Nov


  • A. Quantum wells
  • A. Semiconductors
  • D. Luminescence
  • D. Optical properties

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics


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