Optical properties of GaNAs/GaAs triple quantum well structures

Yo Yu Chen, Jia Ren Lee, Meng Luan Weng, Chien-Rong Lu, Bing Ruey Wu, Wen Jeng Ho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

Original languageEnglish
Pages (from-to)1857-1860
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume65
Issue number11
DOIs
Publication statusPublished - 2004 Nov 1

Fingerprint

Semiconductor quantum wells
Optical properties
quantum wells
optical properties
Electric fields
Photoluminescence spectroscopy
electric fields
Boundary conditions
Annealing
boundary conditions
photoluminescence
oscillations
annealing
energy
matrices
spectroscopy
gallium arsenide
Temperature
temperature

Keywords

  • A. Quantum wells
  • A. Semiconductors
  • D. Luminescence
  • D. Optical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Optical properties of GaNAs/GaAs triple quantum well structures. / Chen, Yo Yu; Lee, Jia Ren; Weng, Meng Luan; Lu, Chien-Rong; Wu, Bing Ruey; Ho, Wen Jeng.

In: Journal of Physics and Chemistry of Solids, Vol. 65, No. 11, 01.11.2004, p. 1857-1860.

Research output: Contribution to journalArticle

Chen, Yo Yu ; Lee, Jia Ren ; Weng, Meng Luan ; Lu, Chien-Rong ; Wu, Bing Ruey ; Ho, Wen Jeng. / Optical properties of GaNAs/GaAs triple quantum well structures. In: Journal of Physics and Chemistry of Solids. 2004 ; Vol. 65, No. 11. pp. 1857-1860.
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AU - Ho, Wen Jeng

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AB - Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hv=E g(GaNxAs1-x). A matrix transfer algorithm was used to match the GaNxAs1-x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.

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