Optical phonon localization in self-assembled Ge islands

Tzueng Rong Yang; Mykhaylo M. Dvoynenko; H. H. Cheng

doi:10.1016/S0921-4526(02)02254-8

Optical phonon localization in self-assembled Ge islands

Tzueng Rong Yang, Mykhaylo M. Dvoynenko^*, H. H. Cheng

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We present a Raman scattering study for self-organized Ge islands on Si substrate carried out at 10 K. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and frequency peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.

Original language	English
Pages (from-to)	1302-1303
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	329-333
Issue number	II
DOIs	https://doi.org/10.1016/S0921-4526(02)02254-8
Publication status	Published - 2003 May

Keywords

Ge dots
Localization
Optical phonons
Raman spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(02)02254-8

Cite this

@article{35102e8321574f5cb50d1c57e964a730,

title = "Optical phonon localization in self-assembled Ge islands",

abstract = "We present a Raman scattering study for self-organized Ge islands on Si substrate carried out at 10 K. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and frequency peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.",

keywords = "Ge dots, Localization, Optical phonons, Raman spectroscopy",

author = "Yang, {Tzueng Rong} and Dvoynenko, {Mykhaylo M.} and Cheng, {H. H.}",

year = "2003",

month = may,

doi = "10.1016/S0921-4526(02)02254-8",

language = "English",

volume = "329-333",

pages = "1302--1303",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "II",

}

TY - JOUR

T1 - Optical phonon localization in self-assembled Ge islands

AU - Yang, Tzueng Rong

AU - Dvoynenko, Mykhaylo M.

AU - Cheng, H. H.

PY - 2003/5

Y1 - 2003/5

N2 - We present a Raman scattering study for self-organized Ge islands on Si substrate carried out at 10 K. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and frequency peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.

AB - We present a Raman scattering study for self-organized Ge islands on Si substrate carried out at 10 K. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and frequency peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.

KW - Ge dots

KW - Localization

KW - Optical phonons

KW - Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=23044495023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23044495023&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(02)02254-8

DO - 10.1016/S0921-4526(02)02254-8

M3 - Article

AN - SCOPUS:23044495023

SN - 0921-4526

VL - 329-333

SP - 1302

EP - 1303

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - II

ER -

Optical phonon localization in self-assembled Ge islands

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this