Optical phonon localization in self-assembled Ge islands

Tzueng Rong Yang, Mykhaylo M. Dvoynenko*, H. H. Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We present a Raman scattering study for self-organized Ge islands on Si substrate carried out at 10 K. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and frequency peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.

Original languageEnglish
Pages (from-to)1302-1303
Number of pages2
JournalPhysica B: Condensed Matter
Issue numberII
Publication statusPublished - 2003 May


  • Ge dots
  • Localization
  • Optical phonons
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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