Optical phonon localization in self-assembled Ge islands

Tzuen-Rong Yang, Mykhaylo M. Dvoynenko, H. H. Cheng

Research output: Contribution to journalArticle

Abstract

We present a Raman scattering study for self-organized Ge islands on Si substrate carried out at 10 K. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and frequency peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.

Original languageEnglish
Pages (from-to)1302-1303
Number of pages2
JournalPhysica B: Condensed Matter
Volume329-333
Issue numberII
DOIs
Publication statusPublished - 2003 Jan 1

Keywords

  • Ge dots
  • Localization
  • Optical phonons
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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