Optical characterization of wurtzite gallium nitride nanowires

M. W. Lee, H. Z. Twu, Chia Chun Chen, C. H. Chen

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

The optical properties of the gallium nitride (GaN) nanowires are examined by the transmission method in the ultraviolet-visible range (1-5 eV) and by the reflection method in the infrared range (500-4000 cm-1). The absorption edge of the GaN nanowires is blueshifted by 0.2 eV from the bulk edge. The temperature dependence of the energy gap is expressed by, Eg(T) = 3.724-9.97 × 10-4/(861+ T) eV. The plasma frequency and the free-carrier density of the GaN nanowires, deduced from the infrared reflectance minima, are estimated to be ωp=1100±120cm-1 and nf = 3.73 × 1017cm-3, respectively. Obtaining the free-carrier density from the infrared reflectance spectra is especially useful in research on nanostructured semiconductors.

Original languageEnglish
Pages (from-to)3693-3695
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number22
DOIs
Publication statusPublished - 2001 Nov 26

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gallium nitrides
wurtzite
nanowires
reflectance
plasma frequencies
optical properties
temperature dependence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical characterization of wurtzite gallium nitride nanowires. / Lee, M. W.; Twu, H. Z.; Chen, Chia Chun; Chen, C. H.

In: Applied Physics Letters, Vol. 79, No. 22, 26.11.2001, p. 3693-3695.

Research output: Contribution to journalArticle

Lee, M. W. ; Twu, H. Z. ; Chen, Chia Chun ; Chen, C. H. / Optical characterization of wurtzite gallium nitride nanowires. In: Applied Physics Letters. 2001 ; Vol. 79, No. 22. pp. 3693-3695.
@article{d1ec5a5d00fa4fd0a485b9533a518325,
title = "Optical characterization of wurtzite gallium nitride nanowires",
abstract = "The optical properties of the gallium nitride (GaN) nanowires are examined by the transmission method in the ultraviolet-visible range (1-5 eV) and by the reflection method in the infrared range (500-4000 cm-1). The absorption edge of the GaN nanowires is blueshifted by 0.2 eV from the bulk edge. The temperature dependence of the energy gap is expressed by, Eg(T) = 3.724-9.97 × 10-4/(861+ T) eV. The plasma frequency and the free-carrier density of the GaN nanowires, deduced from the infrared reflectance minima, are estimated to be ωp=1100±120cm-1 and nf = 3.73 × 1017cm-3, respectively. Obtaining the free-carrier density from the infrared reflectance spectra is especially useful in research on nanostructured semiconductors.",
author = "Lee, {M. W.} and Twu, {H. Z.} and Chen, {Chia Chun} and Chen, {C. H.}",
year = "2001",
month = "11",
day = "26",
doi = "10.1063/1.1416476",
language = "English",
volume = "79",
pages = "3693--3695",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Optical characterization of wurtzite gallium nitride nanowires

AU - Lee, M. W.

AU - Twu, H. Z.

AU - Chen, Chia Chun

AU - Chen, C. H.

PY - 2001/11/26

Y1 - 2001/11/26

N2 - The optical properties of the gallium nitride (GaN) nanowires are examined by the transmission method in the ultraviolet-visible range (1-5 eV) and by the reflection method in the infrared range (500-4000 cm-1). The absorption edge of the GaN nanowires is blueshifted by 0.2 eV from the bulk edge. The temperature dependence of the energy gap is expressed by, Eg(T) = 3.724-9.97 × 10-4/(861+ T) eV. The plasma frequency and the free-carrier density of the GaN nanowires, deduced from the infrared reflectance minima, are estimated to be ωp=1100±120cm-1 and nf = 3.73 × 1017cm-3, respectively. Obtaining the free-carrier density from the infrared reflectance spectra is especially useful in research on nanostructured semiconductors.

AB - The optical properties of the gallium nitride (GaN) nanowires are examined by the transmission method in the ultraviolet-visible range (1-5 eV) and by the reflection method in the infrared range (500-4000 cm-1). The absorption edge of the GaN nanowires is blueshifted by 0.2 eV from the bulk edge. The temperature dependence of the energy gap is expressed by, Eg(T) = 3.724-9.97 × 10-4/(861+ T) eV. The plasma frequency and the free-carrier density of the GaN nanowires, deduced from the infrared reflectance minima, are estimated to be ωp=1100±120cm-1 and nf = 3.73 × 1017cm-3, respectively. Obtaining the free-carrier density from the infrared reflectance spectra is especially useful in research on nanostructured semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=0035956037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035956037&partnerID=8YFLogxK

U2 - 10.1063/1.1416476

DO - 10.1063/1.1416476

M3 - Article

AN - SCOPUS:0035956037

VL - 79

SP - 3693

EP - 3695

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -