Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

C. R. Lu*, H. L. Liu, J. R. Lee, C. H. Wu, H. H. Lin, L. W. Sung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.

Original languageEnglish
Pages (from-to)2082-2085
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Issue number11
Publication statusPublished - 2005 Nov


  • A. Quantum wells
  • A. Semiconductors
  • D. Optical properties

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics


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