Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

C. R. Lu; H. L. Liu; J. R. Lee; C. H. Wu; H. H. Lin; L. W. Sung

doi:10.1016/j.jpcs.2005.09.059

Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

C. R. Lu^*, H. L. Liu, J. R. Lee, C. H. Wu, H. H. Lin, L. W. Sung

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=E_g(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.

Original language	English
Pages (from-to)	2082-2085
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	66
Issue number	11
DOIs	https://doi.org/10.1016/j.jpcs.2005.09.059
Publication status	Published - 2005 Nov

Keywords

A. Quantum wells
A. Semiconductors
D. Optical properties

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.jpcs.2005.09.059

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@article{a94e2e3387fe40d39f520d218f2407fc,

title = "Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers",

abstract = "Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.",

keywords = "A. Quantum wells, A. Semiconductors, D. Optical properties",

author = "Lu, {C. R.} and Liu, {H. L.} and Lee, {J. R.} and Wu, {C. H.} and Lin, {H. H.} and Sung, {L. W.}",

note = "Funding Information: Financial support from National Science Council (NSC 90-2112-M-003-026) and Taiwan Normal University is gratefully acknowledged.",

year = "2005",

month = nov,

doi = "10.1016/j.jpcs.2005.09.059",

language = "English",

volume = "66",

pages = "2082--2085",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

AU - Lu, C. R.

AU - Liu, H. L.

AU - Lee, J. R.

AU - Wu, C. H.

AU - Lin, H. H.

AU - Sung, L. W.

N1 - Funding Information: Financial support from National Science Council (NSC 90-2112-M-003-026) and Taiwan Normal University is gratefully acknowledged.

PY - 2005/11

Y1 - 2005/11

N2 - Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.

AB - Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.

KW - A. Quantum wells

KW - A. Semiconductors

KW - D. Optical properties

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DO - 10.1016/j.jpcs.2005.09.059

M3 - Article

AN - SCOPUS:29144443686

SN - 0022-3697

VL - 66

SP - 2082

EP - 2085

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 11

ER -

Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

Abstract

Keywords

ASJC Scopus subject areas

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