Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

T. R. Yang

doi:10.1016/S0921-4526(99)02622-8

Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

T. R. Yang^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.

Original language	English
Pages (from-to)	1189-1190
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)02622-8
Publication status	Published - 2000

Keywords

Far-infrared
InSb
Lattice vibration mode
Raman scattering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)02622-8

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abstract = "InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.",

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T1 - Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

AU - Yang, T. R.

PY - 2000

Y1 - 2000

N2 - InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.

AB - InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.

KW - Far-infrared

KW - InSb

KW - Lattice vibration mode

KW - Raman scattering

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SN - 0921-4526

VL - 284-288

SP - 1189

EP - 1190

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - PART II

ER -

Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

Abstract

Keywords

ASJC Scopus subject areas

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