Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

T. R. Yang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.

Original languageEnglish
Pages (from-to)1189-1190
Number of pages2
JournalPhysica B: Condensed Matter
Issue numberPART II
Publication statusPublished - 2000


  • Far-infrared
  • InSb
  • Lattice vibration mode
  • Raman scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films'. Together they form a unique fingerprint.

Cite this