INIS
transport
100%
films
100%
thin films
100%
chemical vapor deposition
100%
gallium arsenides
100%
phonons
75%
concentration
50%
mobility
50%
dielectric constant
50%
carriers
50%
effective mass
50%
comparative evaluations
25%
values
25%
distribution
25%
growth
25%
substrates
25%
defects
25%
thickness
25%
interference
25%
spectroscopy
25%
figure of merit
25%
line widths
25%
lattice vibrations
25%
curium 240
25%
Physics
Transport Properties
100%
Thin Films
100%
Optical Properties
100%
Metalorganic Chemical Vapor Deposition
100%
Ratios
50%
Reflectance
50%
Frequencies
25%
Temperature
25%
Independent Variables
25%
Behavior
25%
Value
25%
Region
25%
Substrates
25%
Growth
25%
Spectrometer
25%
Spectroscopy
25%
Film Thickness
25%
Interference
25%
Lattice Vibration
25%
Material Science
Thin Films
100%
Chemical Vapor Deposition
100%
Gallium Arsenide
100%
Permittivity
50%
Crystalline Material
50%
Carrier Concentration
50%
Material
25%
Temperature
25%
Film Thickness
25%
Lattice Vibration
25%
Linewidth
25%
Engineering
Fringe Effect
25%
Integrated Intensity Ratio
25%
Grown Material
25%
Related Defect
25%
Frequency Line
25%
Chemistry
IR Reflectance Spectroscopy
16%