Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition

Tzuen Rong Yang; Yukun Cheng; Jyun Bi Wang; Zhe Chuan Feng

doi:10.1016/j.tsf.2005.07.067

Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition

Tzuen Rong Yang, Yukun Cheng, Jyun Bi Wang, Zhe Chuan Feng^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III-V source ratios on the films crystalline quality were examined. Two additional weak modes in the wavenumber regions of 210-240 cm^- ¹ were observed and they appeared more prominent at low temperatures. Interference fringe effects modify the FIR reflectance band of the GaAs substrate, which are related to the uniformity of film thickness and crystalline perfection. The dielectric constant, phonon modes and other optical parameters, as well as transport properties including carrier concentration, mobility, effective mass were calculated theoretically and compared with experimental results. The obtained distribution values of the InSb LO phonon mode frequency, line width, relative integrated intensity ratio between the forbidden and defect-related TO phonon and the allowed LO mode are adopted as figures of merit for the quality of the InSb films. The electrical transport properties of carrier concentration, mobility, and effective mass as well as the dielectric constant of these films have been determined by optical method non-destructively.

Original language	English
Pages (from-to)	158-162
Number of pages	5
Journal	Thin Solid Films
Volume	498
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.067
Publication status	Published - 2006 Mar 1
Event	Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 2004 Nov 12 → 2004 Nov 14

Keywords

Characterization
Fourier transfer infrared spectroscopy
GaAs
InSb
Metalorganic chemical vapor deposition (MOCVD)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.07.067

Cite this

@article{96bda28610594d4abe9ce1adccec3152,

title = "Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition",

abstract = "Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III-V source ratios on the films crystalline quality were examined. Two additional weak modes in the wavenumber regions of 210-240 cm- 1 were observed and they appeared more prominent at low temperatures. Interference fringe effects modify the FIR reflectance band of the GaAs substrate, which are related to the uniformity of film thickness and crystalline perfection. The dielectric constant, phonon modes and other optical parameters, as well as transport properties including carrier concentration, mobility, effective mass were calculated theoretically and compared with experimental results. The obtained distribution values of the InSb LO phonon mode frequency, line width, relative integrated intensity ratio between the forbidden and defect-related TO phonon and the allowed LO mode are adopted as figures of merit for the quality of the InSb films. The electrical transport properties of carrier concentration, mobility, and effective mass as well as the dielectric constant of these films have been determined by optical method non-destructively.",

keywords = "Characterization, Fourier transfer infrared spectroscopy, GaAs, InSb, Metalorganic chemical vapor deposition (MOCVD)",

author = "Yang, {Tzuen Rong} and Yukun Cheng and Wang, {Jyun Bi} and {Chuan Feng}, Zhe",

note = "Funding Information: We acknowledge the support, materials preparation and help in this work from Drs. N. Schumaker, R. Stall, I. Ferguson, and C. Beckham. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.; Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD ; Conference date: 12-11-2004 Through 14-11-2004",

year = "2006",

month = mar,

day = "1",

doi = "10.1016/j.tsf.2005.07.067",

language = "English",

volume = "498",

pages = "158--162",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition

AU - Yang, Tzuen Rong

AU - Cheng, Yukun

AU - Wang, Jyun Bi

AU - Chuan Feng, Zhe

N1 - Funding Information: We acknowledge the support, materials preparation and help in this work from Drs. N. Schumaker, R. Stall, I. Ferguson, and C. Beckham. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III-V source ratios on the films crystalline quality were examined. Two additional weak modes in the wavenumber regions of 210-240 cm- 1 were observed and they appeared more prominent at low temperatures. Interference fringe effects modify the FIR reflectance band of the GaAs substrate, which are related to the uniformity of film thickness and crystalline perfection. The dielectric constant, phonon modes and other optical parameters, as well as transport properties including carrier concentration, mobility, effective mass were calculated theoretically and compared with experimental results. The obtained distribution values of the InSb LO phonon mode frequency, line width, relative integrated intensity ratio between the forbidden and defect-related TO phonon and the allowed LO mode are adopted as figures of merit for the quality of the InSb films. The electrical transport properties of carrier concentration, mobility, and effective mass as well as the dielectric constant of these films have been determined by optical method non-destructively.

AB - Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III-V source ratios on the films crystalline quality were examined. Two additional weak modes in the wavenumber regions of 210-240 cm- 1 were observed and they appeared more prominent at low temperatures. Interference fringe effects modify the FIR reflectance band of the GaAs substrate, which are related to the uniformity of film thickness and crystalline perfection. The dielectric constant, phonon modes and other optical parameters, as well as transport properties including carrier concentration, mobility, effective mass were calculated theoretically and compared with experimental results. The obtained distribution values of the InSb LO phonon mode frequency, line width, relative integrated intensity ratio between the forbidden and defect-related TO phonon and the allowed LO mode are adopted as figures of merit for the quality of the InSb films. The electrical transport properties of carrier concentration, mobility, and effective mass as well as the dielectric constant of these films have been determined by optical method non-destructively.

KW - Characterization

KW - Fourier transfer infrared spectroscopy

KW - GaAs

KW - InSb

KW - Metalorganic chemical vapor deposition (MOCVD)

UR - http://www.scopus.com/inward/record.url?scp=30944459247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30944459247&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.07.067

DO - 10.1016/j.tsf.2005.07.067

M3 - Conference article

AN - SCOPUS:30944459247

SN - 0040-6090

VL - 498

SP - 158

EP - 162

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD

Y2 - 12 November 2004 through 14 November 2004

ER -

Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this