Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition

Tzuen-Rong Yang, Yukun Cheng, Jyun Bi Wang, Zhe Chuan Feng

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III-V source ratios on the films crystalline quality were examined. Two additional weak modes in the wavenumber regions of 210-240 cm- 1 were observed and they appeared more prominent at low temperatures. Interference fringe effects modify the FIR reflectance band of the GaAs substrate, which are related to the uniformity of film thickness and crystalline perfection. The dielectric constant, phonon modes and other optical parameters, as well as transport properties including carrier concentration, mobility, effective mass were calculated theoretically and compared with experimental results. The obtained distribution values of the InSb LO phonon mode frequency, line width, relative integrated intensity ratio between the forbidden and defect-related TO phonon and the allowed LO mode are adopted as figures of merit for the quality of the InSb films. The electrical transport properties of carrier concentration, mobility, and effective mass as well as the dielectric constant of these films have been determined by optical method non-destructively.

Original languageEnglish
Pages (from-to)158-162
Number of pages5
JournalThin Solid Films
Volume498
Issue number1-2
DOIs
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14

Fingerprint

Metallorganic chemical vapor deposition
Transport properties
metalorganic chemical vapor deposition
Optical properties
transport properties
optical properties
Thin films
Carrier concentration
Permittivity
thin films
Crystalline materials
Infrared radiation
Lattice vibrations
permittivity
reflectance
Linewidth
Film thickness
lattice vibrations
figure of merit
Spectroscopy

Keywords

  • Characterization
  • Fourier transfer infrared spectroscopy
  • GaAs
  • InSb
  • Metalorganic chemical vapor deposition (MOCVD)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition. / Yang, Tzuen-Rong; Cheng, Yukun; Wang, Jyun Bi; Chuan Feng, Zhe.

In: Thin Solid Films, Vol. 498, No. 1-2, 01.03.2006, p. 158-162.

Research output: Contribution to journalConference article

Yang, Tzuen-Rong ; Cheng, Yukun ; Wang, Jyun Bi ; Chuan Feng, Zhe. / Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition. In: Thin Solid Films. 2006 ; Vol. 498, No. 1-2. pp. 158-162.
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AB - Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III-V source ratios on the films crystalline quality were examined. Two additional weak modes in the wavenumber regions of 210-240 cm- 1 were observed and they appeared more prominent at low temperatures. Interference fringe effects modify the FIR reflectance band of the GaAs substrate, which are related to the uniformity of film thickness and crystalline perfection. The dielectric constant, phonon modes and other optical parameters, as well as transport properties including carrier concentration, mobility, effective mass were calculated theoretically and compared with experimental results. The obtained distribution values of the InSb LO phonon mode frequency, line width, relative integrated intensity ratio between the forbidden and defect-related TO phonon and the allowed LO mode are adopted as figures of merit for the quality of the InSb films. The electrical transport properties of carrier concentration, mobility, and effective mass as well as the dielectric constant of these films have been determined by optical method non-destructively.

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