Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng; X. Zhang; S. J. Chua; T. R. Yang; J. C. Deng; G. Xu

doi:10.1016/S0040-6090(02)00096-2

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng^*, X. Zhang, S. J. Chua, T. R. Yang, J. C. Deng, G. Xu

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

22 Citations (Scopus)

Abstract

GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

Original language	English
Pages (from-to)	15-22
Number of pages	8
Journal	Thin Solid Films
Volume	409
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(02)00096-2
Publication status	Published - 2002 Apr 22
Event	Proceedings of the 2nd Asian Conference on Chemical Vapour Dep - Gyeongje, Korea, Republic of Duration: 2001 May 28 → 2001 May 30

Keywords

GaN
MOCVD
Optical and structural properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(02)00096-2

Cite this

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title = "Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition",

abstract = "GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.",

keywords = "GaN, MOCVD, Optical and structural properties",

author = "Feng, {Z. C.} and X. Zhang and Chua, {S. J.} and Yang, {T. R.} and Deng, {J. C.} and G. Xu",

year = "2002",

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TY - JOUR

T1 - Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

AU - Feng, Z. C.

AU - Zhang, X.

AU - Chua, S. J.

AU - Yang, T. R.

AU - Deng, J. C.

AU - Xu, G.

PY - 2002/4/22

Y1 - 2002/4/22

N2 - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

AB - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

KW - GaN

KW - MOCVD

KW - Optical and structural properties

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EP - 22

JO - Thin Solid Films

JF - Thin Solid Films

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T2 - Proceedings of the 2nd Asian Conference on Chemical Vapour Dep

Y2 - 28 May 2001 through 30 May 2001

ER -

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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