Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng, X. Zhang, S. J. Chua, Tzuen-Rong Yang, J. C. Deng, G. Xu

Research output: Contribution to journalConference article

21 Citations (Scopus)

Abstract

GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

Original languageEnglish
Pages (from-to)15-22
Number of pages8
JournalThin Solid Films
Volume409
Issue number1
DOIs
Publication statusPublished - 2002 Apr 22
EventProceedings of the 2nd Asian Conference on Chemical Vapour Dep - Gyeongje, Korea, Republic of
Duration: 2001 May 282001 May 30

Fingerprint

Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Buffer layers
Structural design
Semiconductor quantum wells
metalorganic chemical vapor deposition
Raman scattering
Structural properties
Materials properties
Fourier transforms
Photoluminescence
Buffers
Optical properties
Crystalline materials
Transmission electron microscopy
Infrared radiation
optical properties
X ray diffraction
Thin films
Scanning electron microscopy

Keywords

  • GaN
  • MOCVD
  • Optical and structural properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition. / Feng, Z. C.; Zhang, X.; Chua, S. J.; Yang, Tzuen-Rong; Deng, J. C.; Xu, G.

In: Thin Solid Films, Vol. 409, No. 1, 22.04.2002, p. 15-22.

Research output: Contribution to journalConference article

Feng, Z. C. ; Zhang, X. ; Chua, S. J. ; Yang, Tzuen-Rong ; Deng, J. C. ; Xu, G. / Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition. In: Thin Solid Films. 2002 ; Vol. 409, No. 1. pp. 15-22.
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AU - Feng, Z. C.

AU - Zhang, X.

AU - Chua, S. J.

AU - Yang, Tzuen-Rong

AU - Deng, J. C.

AU - Xu, G.

PY - 2002/4/22

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N2 - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

AB - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

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