Abstract
GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.
| Original language | English |
|---|---|
| Pages (from-to) | 15-22 |
| Number of pages | 8 |
| Journal | Thin Solid Films |
| Volume | 409 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2002 Apr 22 |
| Event | Proceedings of the 2nd Asian Conference on Chemical Vapour Dep - Gyeongje, Korea, Republic of Duration: 2001 May 28 → 2001 May 30 |
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Keywords
- GaN
- MOCVD
- Optical and structural properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition. / Feng, Z. C.; Zhang, X.; Chua, S. J.; Yang, Tzuen-Rong; Deng, J. C.; Xu, G.
In: Thin Solid Films, Vol. 409, No. 1, 22.04.2002, p. 15-22.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
AU - Feng, Z. C.
AU - Zhang, X.
AU - Chua, S. J.
AU - Yang, Tzuen-Rong
AU - Deng, J. C.
AU - Xu, G.
PY - 2002/4/22
Y1 - 2002/4/22
N2 - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.
AB - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.
KW - GaN
KW - MOCVD
KW - Optical and structural properties
UR - http://www.scopus.com/inward/record.url?scp=0037156054&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037156054&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(02)00096-2
DO - 10.1016/S0040-6090(02)00096-2
M3 - Conference article
AN - SCOPUS:0037156054
VL - 409
SP - 15
EP - 22
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -