Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng, X. Zhang, S. J. Chua, Tzuen-Rong Yang, J. C. Deng, G. Xu

Research output: Contribution to journalConference article

21 Citations (Scopus)

Abstract

GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

Original languageEnglish
Pages (from-to)15-22
Number of pages8
JournalThin Solid Films
Volume409
Issue number1
DOIs
Publication statusPublished - 2002 Apr 22
EventProceedings of the 2nd Asian Conference on Chemical Vapour Dep - Gyeongje, Korea, Republic of
Duration: 2001 May 282001 May 30

Keywords

  • GaN
  • MOCVD
  • Optical and structural properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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