Optical and material properties of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng*, J. W. Yu, J. Zhao, T. R. Yang, R. P.G. Karunasiri, W. Lu, W. E. Collins

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Si1-xGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-x Gex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.

Original languageEnglish
Pages (from-to)3265-3269
Number of pages5
JournalSurface and Coatings Technology
Issue number10 SPEC. ISS.
Publication statusPublished - 2006 Feb 24


  • FTIR
  • RBS
  • Raman
  • SIMS
  • SiGe
  • XRD

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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