Optical and material properties of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng; J. W. Yu; J. Zhao; T. R. Yang; R. P.G. Karunasiri; W. Lu; W. E. Collins

doi:10.1016/j.surfcoat.2005.07.027

Optical and material properties of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng^*, J. W. Yu, J. Zhao, T. R. Yang, R. P.G. Karunasiri, W. Lu, W. E. Collins

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Si_1-xGe_x layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si_1-x Ge_x layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.

Original language	English
Pages (from-to)	3265-3269
Number of pages	5
Journal	Surface and Coatings Technology
Volume	200
Issue number	10 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2005.07.027
Publication status	Published - 2006 Feb 24

Keywords

FTIR
MOCVD
RBS
Raman
SIMS
SiGe
XRD

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2005.07.027

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title = "Optical and material properties of sandwiched Si/SiGe/Si heterostructures",

abstract = "Si1-xGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-x Gex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.",

keywords = "FTIR, MOCVD, RBS, Raman, SIMS, SiGe, XRD",

author = "Feng, {Z. C.} and Yu, {J. W.} and J. Zhao and Yang, {T. R.} and Karunasiri, {R. P.G.} and W. Lu and Collins, {W. E.}",

note = "Funding Information: We acknowledge the help and support from Profs. K.L. Wang, F. Watt, A.T.S. Wee and J. Lin. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.",

year = "2006",

month = feb,

day = "24",

doi = "10.1016/j.surfcoat.2005.07.027",

language = "English",

volume = "200",

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TY - JOUR

T1 - Optical and material properties of sandwiched Si/SiGe/Si heterostructures

AU - Feng, Z. C.

AU - Yu, J. W.

AU - Zhao, J.

AU - Yang, T. R.

AU - Karunasiri, R. P.G.

AU - Lu, W.

AU - Collins, W. E.

N1 - Funding Information: We acknowledge the help and support from Profs. K.L. Wang, F. Watt, A.T.S. Wee and J. Lin. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.

PY - 2006/2/24

Y1 - 2006/2/24

N2 - Si1-xGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-x Gex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.

AB - Si1-xGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-x Gex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.

KW - FTIR

KW - MOCVD

KW - RBS

KW - Raman

KW - SIMS

KW - SiGe

KW - XRD

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U2 - 10.1016/j.surfcoat.2005.07.027

DO - 10.1016/j.surfcoat.2005.07.027

M3 - Article

AN - SCOPUS:31644451868

SN - 0257-8972

VL - 200

SP - 3265

EP - 3269

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 10 SPEC. ISS.

ER -

Optical and material properties of sandwiched Si/SiGe/Si heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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