One-Transistor ferroelectric versatile memory: Strained-gate engineering for realizing energy-efficient switching and fast negative-capacitance operation

Yu Chien Chiu, Chun Hu Cheng, Chun Yen Chang, Ying Tsan Tang, Min Cheng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

In this work, we report a ferroelectric versatile memory (FE-VM) with strained-gate engineering. The memory window of high strain case was improved by ∼47% at the same ferroelectric thickness, which agrees with the increase of orthorhombic crystallinity. Based on a reliable first principle calculation (FPC), we clarify that the gate strain accelerates the phase transformation from metastable monoclinic to orthorhombic and thus largely enhances the ferroelectric polarization without increasing dielectric thickness. On the other hand, the orthorhombic FE-AFE phase transition plays a key role in realizing negative capacitance (NC) effect at high gate electric field. This 1T strained-gate FE-VM with ferroelectric NC achieves a sub-60-mVdec subthreshold swing (SS) over ∼4 decade of ID to provide a 1∼10 fA/μm Ioff and >108 Ion/Ioff ratio, which allows for a fast 20-ns P/E switching during 1012 cycling endurance.

Original languageEnglish
Title of host publication2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006373
DOIs
Publication statusPublished - 2016 Sep 21
Externally publishedYes
Event36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States
Duration: 2016 Jun 132016 Jun 16

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2016-September
ISSN (Print)0743-1562

Other

Other36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
CountryUnited States
CityHonolulu
Period16/6/1316/6/16

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chiu, Y. C., Cheng, C. H., Chang, C. Y., Tang, Y. T., & Chen, M. C. (2016). One-Transistor ferroelectric versatile memory: Strained-gate engineering for realizing energy-efficient switching and fast negative-capacitance operation. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 [7573414] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2016.7573414