One-dimensional arrays of self-assembled InAs/InP quantum dots

Jacques Lefebvre; Philip J. Poole; John P. McCaffrey; Boris Lamontagne; Geof C. Aers; Chien Ping Lee; Shu Fen Hu; Robin L. Williams

doi:10.1117/12.392132

One-dimensional arrays of self-assembled InAs/InP quantum dots

Jacques Lefebvre^*, Philip J. Poole, John P. McCaffrey, Boris Lamontagne, Geof C. Aers, Chien Ping Lee, Shu Fen Hu, Robin L. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.

Original language	English
Pages (from-to)	124-128
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4078
DOIs	https://doi.org/10.1117/12.392132
Publication status	Published - 2000
Externally published	Yes
Event	Optoelectronic Materials and Devices II - Taipei, Taiwan Duration: 2000 Jul 26 → 2000 Jul 28

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.392132

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title = "One-dimensional arrays of self-assembled InAs/InP quantum dots",

abstract = "The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.",

author = "Jacques Lefebvre and Poole, {Philip J.} and McCaffrey, {John P.} and Boris Lamontagne and Aers, {Geof C.} and Lee, {Chien Ping} and Hu, {Shu Fen} and Williams, {Robin L.}",

year = "2000",

doi = "10.1117/12.392132",

language = "English",

volume = "4078",

pages = "124--128",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Optoelectronic Materials and Devices II ; Conference date: 26-07-2000 Through 28-07-2000",

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TY - JOUR

T1 - One-dimensional arrays of self-assembled InAs/InP quantum dots

AU - Lefebvre, Jacques

AU - Poole, Philip J.

AU - McCaffrey, John P.

AU - Lamontagne, Boris

AU - Aers, Geof C.

AU - Lee, Chien Ping

AU - Hu, Shu Fen

AU - Williams, Robin L.

PY - 2000

Y1 - 2000

N2 - The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.

AB - The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.

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DO - 10.1117/12.392132

M3 - Conference article

AN - SCOPUS:0033697804

SN - 0277-786X

VL - 4078

SP - 124

EP - 128

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optoelectronic Materials and Devices II

Y2 - 26 July 2000 through 28 July 2000

ER -

One-dimensional arrays of self-assembled InAs/InP quantum dots

Abstract

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