On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Yu Chien Chiu; Chun Yen Chang; Shiang Shiou Yen; Chia Chi Fan; Hsiao Hsuan Hsu; Chun Hu Cheng; Po Chun Chen; Po Wei Chen; Guan Lin Liou; Min Hung Lee; Chien Liu; Wu Ching Chou

doi:10.1109/IRPS.2016.7574623

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance

Yu Chien Chiu, Chun Yen Chang, Shiang Shiou Yen, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Hu Cheng, Po Chun Chen, Po Wei Chen, Guan Lin Liou, Min Hung Lee, Chien Liu, Wu Ching Chou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 10¹² cycling endurance.

Original language	English
Title of host publication	2016 International Reliability Physics Symposium, IRPS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	MY71-MY75
ISBN (Electronic)	9781467391368
DOIs	https://doi.org/10.1109/IRPS.2016.7574623
Publication status	Published - 2016 Sept 22
Event	2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States Duration: 2016 Apr 17 → 2016 Apr 21

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2016-September
ISSN (Print)	1541-7026

Other

Other	2016 International Reliability Physics Symposium, IRPS 2016
Country/Territory	United States
City	Pasadena
Period	2016/04/17 → 2016/04/21

Keywords

HfZrO
charge trapping
ferroelectric polarization
nonvolatile memory

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IRPS.2016.7574623

Cite this

Chiu, Y. C., Chang, C. Y., Yen, S. S., Fan, C. C., Hsu, H. H., Cheng, C. H., Chen, P. C., Chen, P. W., Liou, G. L., Lee, M. H., Liu, C., & Chou, W. C. (2016). On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. In 2016 International Reliability Physics Symposium, IRPS 2016 (pp. MY71-MY75). Article 7574623 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574623

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. / Chiu, Yu Chien; Chang, Chun Yen; Yen, Shiang Shiou et al.
2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. MY71-MY75 7574623 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiu, YC, Chang, CY, Yen, SS, Fan, CC, Hsu, HH, Cheng, CH, Chen, PC, Chen, PW, Liou, GL, Lee, MH, Liu, C & Chou, WC 2016, On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. in 2016 International Reliability Physics Symposium, IRPS 2016., 7574623, IEEE International Reliability Physics Symposium Proceedings, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. MY71-MY75, 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, United States, 2016/04/17. https://doi.org/10.1109/IRPS.2016.7574623

Chiu YC, Chang CY, Yen SS, Fan CC, Hsu HH, Cheng CH et al. On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. In 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. MY71-MY75. 7574623. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2016.7574623

Chiu, Yu Chien ; Chang, Chun Yen ; Yen, Shiang Shiou et al. / On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. MY71-MY75 (IEEE International Reliability Physics Symposium Proceedings).

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abstract = "Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 1012 cycling endurance.",

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