On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Yu Chien Chiu, Chun Yen Chang, Shiang Shiou Yen, Chia Chi Fan, Hsiao Hsuan Hsu, Chun-Hu Cheng, Po Chun Chen, Po Wei Chen, Guan Lin Liou, Min-Hung Lee, Chien Liu, Wu Ching Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 1012 cycling endurance.

Original languageEnglish
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesMY71-MY75
ISBN (Electronic)9781467391368
DOIs
Publication statusPublished - 2016 Sep 22
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: 2016 Apr 172016 Apr 21

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2016-September
ISSN (Print)1541-7026

Other

Other2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period16/4/1716/4/21

Fingerprint

Threshold voltage
Ferroelectric materials
Durability
Data storage equipment
Capacitance
Tuning
Defects

Keywords

  • HfZrO
  • charge trapping
  • ferroelectric polarization
  • nonvolatile memory

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chiu, Y. C., Chang, C. Y., Yen, S. S., Fan, C. C., Hsu, H. H., Cheng, C-H., ... Chou, W. C. (2016). On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. In 2016 International Reliability Physics Symposium, IRPS 2016 (pp. MY71-MY75). [7574623] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574623

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. / Chiu, Yu Chien; Chang, Chun Yen; Yen, Shiang Shiou; Fan, Chia Chi; Hsu, Hsiao Hsuan; Cheng, Chun-Hu; Chen, Po Chun; Chen, Po Wei; Liou, Guan Lin; Lee, Min-Hung; Liu, Chien; Chou, Wu Ching.

2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. MY71-MY75 7574623 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chiu, YC, Chang, CY, Yen, SS, Fan, CC, Hsu, HH, Cheng, C-H, Chen, PC, Chen, PW, Liou, GL, Lee, M-H, Liu, C & Chou, WC 2016, On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. in 2016 International Reliability Physics Symposium, IRPS 2016., 7574623, IEEE International Reliability Physics Symposium Proceedings, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. MY71-MY75, 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, United States, 16/4/17. https://doi.org/10.1109/IRPS.2016.7574623
Chiu YC, Chang CY, Yen SS, Fan CC, Hsu HH, Cheng C-H et al. On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. In 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. MY71-MY75. 7574623. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2016.7574623
Chiu, Yu Chien ; Chang, Chun Yen ; Yen, Shiang Shiou ; Fan, Chia Chi ; Hsu, Hsiao Hsuan ; Cheng, Chun-Hu ; Chen, Po Chun ; Chen, Po Wei ; Liou, Guan Lin ; Lee, Min-Hung ; Liu, Chien ; Chou, Wu Ching. / On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. MY71-MY75 (IEEE International Reliability Physics Symposium Proceedings).
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abstract = "Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 1012 cycling endurance.",
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AU - Hsu, Hsiao Hsuan

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