On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs

Shuang Yuan Chen; Chia Hao Tu; Jung Chun Lin; Ying Tsung Chen; Sheng Jun Zhuang; Heng Sheng Huang; Chuan Hsi Liu; Sam Chou; Joe Ko

doi:10.1080/02533839.2007.9671311

On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs

Shuang Yuan Chen^*, Chia Hao Tu, Jung Chun Lin, Ying Tsung Chen, Sheng Jun Zhuang, Heng Sheng Huang, Chuan Hsi Liu, Sam Chou, Joe Ko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (V_t) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect V_t variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required V_t characteristics.

Original language	English
Pages (from-to)	847-853
Number of pages	7
Journal	Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Volume	30
Issue number	5
DOIs	https://doi.org/10.1080/02533839.2007.9671311
Publication status	Published - 2007
Externally published	Yes

Keywords

LDD
Pocket implant
RSCE
SCE

ASJC Scopus subject areas

General Engineering

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10.1080/02533839.2007.9671311

Cite this

Chen, S. Y., Tu, C. H., Lin, J. C., Chen, Y. T., Zhuang, S. J., Huang, H. S., Liu, C. H., Chou, S., & Ko, J. (2007). On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs. Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, 30(5), 847-853. https://doi.org/10.1080/02533839.2007.9671311

On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs. / Chen, Shuang Yuan; Tu, Chia Hao; Lin, Jung Chun et al.
In: Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, Vol. 30, No. 5, 2007, p. 847-853.

Research output: Contribution to journal › Article › peer-review

Chen, SY, Tu, CH, Lin, JC, Chen, YT, Zhuang, SJ, Huang, HS, Liu, CH, Chou, S & Ko, J 2007, 'On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs', Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, vol. 30, no. 5, pp. 847-853. https://doi.org/10.1080/02533839.2007.9671311

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abstract = "In order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (Vt) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect Vt variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required Vt characteristics.",

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author = "Chen, {Shuang Yuan} and Tu, {Chia Hao} and Lin, {Jung Chun} and Chen, {Ying Tsung} and Zhuang, {Sheng Jun} and Huang, {Heng Sheng} and Liu, {Chuan Hsi} and Sam Chou and Joe Ko",

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AU - Chen, Shuang Yuan

AU - Tu, Chia Hao

AU - Lin, Jung Chun

AU - Chen, Ying Tsung

AU - Zhuang, Sheng Jun

AU - Huang, Heng Sheng

AU - Liu, Chuan Hsi

AU - Chou, Sam

AU - Ko, Joe

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N2 - In order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (Vt) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect Vt variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required Vt characteristics.

AB - In order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (Vt) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect Vt variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required Vt characteristics.

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KW - Pocket implant

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On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs

Abstract

Keywords

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