On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs

Shuang Yuan Chen, Chia Hao Tu, Jung Chun Lin, Ying Tsung Chen, Sheng Jun Zhuang, Heng Sheng Huang, Chuan-Hsi Liu, Sam Chou, Joe Ko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (Vt) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect Vt variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required Vt characteristics.

Original languageEnglish
Pages (from-to)847-853
Number of pages7
JournalJournal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Volume30
Issue number5
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Threshold voltage
Electric potential
Microelectronics
Mathematical models
Silicon
Industry

Keywords

  • LDD
  • Pocket implant
  • RSCE
  • SCE

ASJC Scopus subject areas

  • Engineering(all)

Cite this

On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs. / Chen, Shuang Yuan; Tu, Chia Hao; Lin, Jung Chun; Chen, Ying Tsung; Zhuang, Sheng Jun; Huang, Heng Sheng; Liu, Chuan-Hsi; Chou, Sam; Ko, Joe.

In: Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, Vol. 30, No. 5, 01.01.2007, p. 847-853.

Research output: Contribution to journalArticle

Chen, Shuang Yuan ; Tu, Chia Hao ; Lin, Jung Chun ; Chen, Ying Tsung ; Zhuang, Sheng Jun ; Huang, Heng Sheng ; Liu, Chuan-Hsi ; Chou, Sam ; Ko, Joe. / On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs. In: Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an. 2007 ; Vol. 30, No. 5. pp. 847-853.
@article{7f006116fe6645ec920e7c2703ed16a5,
title = "On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs",
abstract = "In order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (Vt) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect Vt variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required Vt characteristics.",
keywords = "LDD, Pocket implant, RSCE, SCE",
author = "Chen, {Shuang Yuan} and Tu, {Chia Hao} and Lin, {Jung Chun} and Chen, {Ying Tsung} and Zhuang, {Sheng Jun} and Huang, {Heng Sheng} and Chuan-Hsi Liu and Sam Chou and Joe Ko",
year = "2007",
month = "1",
day = "1",
doi = "10.1080/02533839.2007.9671311",
language = "English",
volume = "30",
pages = "847--853",
journal = "Chung-kuo Kung Ch'eng Hsueh K'an/Journal of the Chinese Institute of Engineers",
issn = "0253-3839",
publisher = "Chinese Institute of Engineers",
number = "5",

}

TY - JOUR

T1 - On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs

AU - Chen, Shuang Yuan

AU - Tu, Chia Hao

AU - Lin, Jung Chun

AU - Chen, Ying Tsung

AU - Zhuang, Sheng Jun

AU - Huang, Heng Sheng

AU - Liu, Chuan-Hsi

AU - Chou, Sam

AU - Ko, Joe

PY - 2007/1/1

Y1 - 2007/1/1

N2 - In order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (Vt) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect Vt variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required Vt characteristics.

AB - In order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (Vt) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect Vt variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required Vt characteristics.

KW - LDD

KW - Pocket implant

KW - RSCE

KW - SCE

UR - http://www.scopus.com/inward/record.url?scp=34547619833&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547619833&partnerID=8YFLogxK

U2 - 10.1080/02533839.2007.9671311

DO - 10.1080/02533839.2007.9671311

M3 - Article

AN - SCOPUS:34547619833

VL - 30

SP - 847

EP - 853

JO - Chung-kuo Kung Ch'eng Hsueh K'an/Journal of the Chinese Institute of Engineers

JF - Chung-kuo Kung Ch'eng Hsueh K'an/Journal of the Chinese Institute of Engineers

SN - 0253-3839

IS - 5

ER -