On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence

Hsiang Lin Liu, J. G. Kim, M. H. Ludwig, R. M. Park

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The kinetics of growth of GaN/(0001) sapphire heteroepitaxial films have been examined in the relatively low substrate temperature range, 560-640 °C, using the reflection high energy electron diffraction (RHEED) specular reflection intensity monitoring technique. In particular, an alternate element exposure method of growth was employed in which Ga and N atoms were supplied separately (rather than simultaneously, as in conventional molecular beam epitaxy) to the substrate with the inclusion of a time delay between successive Ga flux and N flux exposures. We interpret the observed time dependent recovery of the RHEED specular reflection intensity during the time delay phases to be associated with Ga-N surface molecule migration on Ga-terminated surfaces and the activation energy for this migration process was determined to be 1.45±0.25 eV.

Original languageEnglish
Pages (from-to)347-349
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number3
DOIs
Publication statusPublished - 1997 Jul 21

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specular reflection
high energy electrons
time lag
electron diffraction
traps
luminescence
kinetics
sapphire
molecular beam epitaxy
recovery
inclusions
activation energy
atoms
molecules
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence. / Liu, Hsiang Lin; Kim, J. G.; Ludwig, M. H.; Park, R. M.

In: Applied Physics Letters, Vol. 71, No. 3, 21.07.1997, p. 347-349.

Research output: Contribution to journalArticle

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