On the electrical characteristics of ferroelectric FinFET using hafnium zirconium oxide with optimized gate stack

M. H. Lin, C. C. Fan, H. H. Hsu, Chuan-Hsi Liu, K. M. Chen, C. H. Cheng, C. Y. Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

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Chemical Compounds

Engineering & Materials Science