On the electrical characteristics of ferroelectric FinFET using hafnium zirconium oxide with optimized gate stack
- M. H. Lin
- , C. C. Fan
- , H. H. Hsu
- , C. Liu
- , K. M. Chen
- , C. H. Cheng
- , C. Y. Chang
Research output: Contribution to journal › Article › peer-review
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