On-Chip HBM and HMM ESD Protection Design for RF Applications in 40-nm CMOS Process

Jie Ting Chen, Chun Yu Lin, Rong Kun Chang, Ming Dou Ker

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

On-chip electrostatic discharge (ESD) protection device with large dimension can sustain high-ESD current, but the parasitic capacitance of the ESD protection device will increase the difficulty of impedance matching and degrade the bandwidth for broadband radio frequency (RF) applications. The traditional distributed ESD protection circuit can achieve good impedance matching, but it has a worse ESD robustness because of larger resistance caused by the input inductor. In this paper, a new distributed ESD protection structure with the stacked diodes with embedded silicon-controlled rectifier is proposed to attain good ESD robustness without degrading the RF performance. The proposed ESD protection circuit has been successfully verified in a 40-nm, 2.5-V CMOS process to sustain a human-metal model of 5 kV. The proposed ESD protection circuit is suitable to protect the broadband RF circuits in advanced nanoscale CMOS technology.

Original languageEnglish
Article number8501596
Pages (from-to)5267-5274
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume65
Issue number12
DOIs
Publication statusPublished - 2018 Dec 1

Keywords

  • Distributed electrostatic discharge (ESD) protection
  • ESD
  • radio frequency (RF)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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