On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity

Reui San Chen, Shiao Wen Wang, Zon Huang Lan, Jeff Tsung Hui Tsai, Chien Ting Wu, Li Chyong Chen, Kuei Hsien Chen, Ying Sheng Huang, Chia Chun Chen

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices (NB) with ultrahigh photocurrent responsivity was demonstrated. A commercial wafer with a 2.0∓0.5μm thick layer of highly n+-doped c-plane GaN on sapphire was used as the substrate for fabrication of the NB device and arrays of Ni/n+-GaN electrode posts were patterned on the insulating sapphire substrate through the photolithography, lift-off, and reactive-ion etching methods. Arrays of n+-GaN posts were also prepatterned to expose a sidewall of selected orientation and after Au catalyst sputtering, nanowires were grown by thermal chemical vapor deposition (CVD) under the conditions of 800-1050°C and 760 Torr using NH3 and Ga as source reagents. High Resolution Transmission Electron Microscopy (HRTEM) and selected area electron diffractometry (SAED) were used to characterize the microstructure and orientation relationship of the NBs.

Original languageEnglish
Pages (from-to)925-929
Number of pages5
JournalSmall
Volume4
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

Fingerprint

Aluminum Oxide
Photocurrents
Sapphire
Fabrication
Equipment and Supplies
Reactive ion etching
Photolithography
Substrates
High resolution transmission electron microscopy
Nanowires
Sputtering
Chemical vapor deposition
Transmission Electron Microscopy
Microstructure
Electrodes
Catalysts
Electrons
Hot Temperature
Ions

Keywords

  • Gallium nitride
  • Nanobridges
  • Nanowires photoconductivity
  • Responsivity

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

Cite this

On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity. / Chen, Reui San; Wang, Shiao Wen; Lan, Zon Huang; Tsai, Jeff Tsung Hui; Wu, Chien Ting; Chen, Li Chyong; Chen, Kuei Hsien; Huang, Ying Sheng; Chen, Chia Chun.

In: Small, Vol. 4, No. 7, 01.07.2008, p. 925-929.

Research output: Contribution to journalArticle

Chen, Reui San ; Wang, Shiao Wen ; Lan, Zon Huang ; Tsai, Jeff Tsung Hui ; Wu, Chien Ting ; Chen, Li Chyong ; Chen, Kuei Hsien ; Huang, Ying Sheng ; Chen, Chia Chun. / On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity. In: Small. 2008 ; Vol. 4, No. 7. pp. 925-929.
@article{e3e13a9ffac1433fb5d7b08238f1d2f5,
title = "On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity",
abstract = "On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices (NB) with ultrahigh photocurrent responsivity was demonstrated. A commercial wafer with a 2.0∓0.5μm thick layer of highly n+-doped c-plane GaN on sapphire was used as the substrate for fabrication of the NB device and arrays of Ni/n+-GaN electrode posts were patterned on the insulating sapphire substrate through the photolithography, lift-off, and reactive-ion etching methods. Arrays of n+-GaN posts were also prepatterned to expose a sidewall of selected orientation and after Au catalyst sputtering, nanowires were grown by thermal chemical vapor deposition (CVD) under the conditions of 800-1050°C and 760 Torr using NH3 and Ga as source reagents. High Resolution Transmission Electron Microscopy (HRTEM) and selected area electron diffractometry (SAED) were used to characterize the microstructure and orientation relationship of the NBs.",
keywords = "Gallium nitride, Nanobridges, Nanowires photoconductivity, Responsivity",
author = "Chen, {Reui San} and Wang, {Shiao Wen} and Lan, {Zon Huang} and Tsai, {Jeff Tsung Hui} and Wu, {Chien Ting} and Chen, {Li Chyong} and Chen, {Kuei Hsien} and Huang, {Ying Sheng} and Chen, {Chia Chun}",
year = "2008",
month = "7",
day = "1",
doi = "10.1002/smll.200701184",
language = "English",
volume = "4",
pages = "925--929",
journal = "Small",
issn = "1613-6810",
publisher = "Wiley-VCH Verlag",
number = "7",

}

TY - JOUR

T1 - On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity

AU - Chen, Reui San

AU - Wang, Shiao Wen

AU - Lan, Zon Huang

AU - Tsai, Jeff Tsung Hui

AU - Wu, Chien Ting

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

AU - Huang, Ying Sheng

AU - Chen, Chia Chun

PY - 2008/7/1

Y1 - 2008/7/1

N2 - On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices (NB) with ultrahigh photocurrent responsivity was demonstrated. A commercial wafer with a 2.0∓0.5μm thick layer of highly n+-doped c-plane GaN on sapphire was used as the substrate for fabrication of the NB device and arrays of Ni/n+-GaN electrode posts were patterned on the insulating sapphire substrate through the photolithography, lift-off, and reactive-ion etching methods. Arrays of n+-GaN posts were also prepatterned to expose a sidewall of selected orientation and after Au catalyst sputtering, nanowires were grown by thermal chemical vapor deposition (CVD) under the conditions of 800-1050°C and 760 Torr using NH3 and Ga as source reagents. High Resolution Transmission Electron Microscopy (HRTEM) and selected area electron diffractometry (SAED) were used to characterize the microstructure and orientation relationship of the NBs.

AB - On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices (NB) with ultrahigh photocurrent responsivity was demonstrated. A commercial wafer with a 2.0∓0.5μm thick layer of highly n+-doped c-plane GaN on sapphire was used as the substrate for fabrication of the NB device and arrays of Ni/n+-GaN electrode posts were patterned on the insulating sapphire substrate through the photolithography, lift-off, and reactive-ion etching methods. Arrays of n+-GaN posts were also prepatterned to expose a sidewall of selected orientation and after Au catalyst sputtering, nanowires were grown by thermal chemical vapor deposition (CVD) under the conditions of 800-1050°C and 760 Torr using NH3 and Ga as source reagents. High Resolution Transmission Electron Microscopy (HRTEM) and selected area electron diffractometry (SAED) were used to characterize the microstructure and orientation relationship of the NBs.

KW - Gallium nitride

KW - Nanobridges

KW - Nanowires photoconductivity

KW - Responsivity

UR - http://www.scopus.com/inward/record.url?scp=48249145188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48249145188&partnerID=8YFLogxK

U2 - 10.1002/smll.200701184

DO - 10.1002/smll.200701184

M3 - Article

C2 - 18512841

AN - SCOPUS:48249145188

VL - 4

SP - 925

EP - 929

JO - Small

JF - Small

SN - 1613-6810

IS - 7

ER -