On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li; Chun Yu Lin

doi:10.1109/APCCAS.2016.7803948

On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li, Chun Yu Lin

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

Original language	English
Title of host publication	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	258-261
Number of pages	4
ISBN (Electronic)	9781509015702
DOIs	https://doi.org/10.1109/APCCAS.2016.7803948
Publication status	Published - 2017 Jan 3
Event	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 - Jeju, Korea, Republic of Duration: 2016 Oct 25 → 2016 Oct 28

Publication series

Name	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

Other

Other	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
Country/Territory	Korea, Republic of
City	Jeju
Period	2016/10/25 → 2016/10/28

Keywords

Diode string
electrostatic discharge (ESD)
power amplifier (PA)
silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Signal Processing

Access to Document

10.1109/APCCAS.2016.7803948

Cite this

Li, G. Y., & Lin, C. Y. (2017). On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. In 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 (pp. 258-261). Article 7803948 (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APCCAS.2016.7803948

On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. / Li, Guan Yi; Lin, Chun Yu.
2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 258-261 7803948 (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, GY & Lin, CY 2017, On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. in 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016., 7803948, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Institute of Electrical and Electronics Engineers Inc., pp. 258-261, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Jeju, Korea, Republic of, 2016/10/25. https://doi.org/10.1109/APCCAS.2016.7803948

Li GY, Lin CY. On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. In 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 258-261. 7803948. (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016). doi: 10.1109/APCCAS.2016.7803948

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abstract = "To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.",

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AB - To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

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On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Abstract

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Keywords

ASJC Scopus subject areas

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