On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li, Chun Yu Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

Original languageEnglish
Title of host publication2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages258-261
Number of pages4
ISBN (Electronic)9781509015702
DOIs
Publication statusPublished - 2017 Jan 3
Event2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 - Jeju, Korea, Republic of
Duration: 2016 Oct 252016 Oct 28

Publication series

Name2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

Other

Other2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
CountryKorea, Republic of
CityJeju
Period16/10/2516/10/28

Fingerprint

Radio frequency amplifiers
Electrostatic discharge
Power amplifiers
Thyristors
Networks (circuits)
Diodes
Integrated circuits
Silicon

Keywords

  • Diode string
  • electrostatic discharge (ESD)
  • power amplifier (PA)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Signal Processing

Cite this

Li, G. Y., & Lin, C. Y. (2017). On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. In 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 (pp. 258-261). [7803948] (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APCCAS.2016.7803948

On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. / Li, Guan Yi; Lin, Chun Yu.

2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 258-261 7803948 (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, GY & Lin, CY 2017, On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. in 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016., 7803948, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Institute of Electrical and Electronics Engineers Inc., pp. 258-261, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Jeju, Korea, Republic of, 16/10/25. https://doi.org/10.1109/APCCAS.2016.7803948
Li GY, Lin CY. On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. In 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 258-261. 7803948. (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016). https://doi.org/10.1109/APCCAS.2016.7803948
Li, Guan Yi ; Lin, Chun Yu. / On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 258-261 (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016).
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