Ohmic contact to p-type GaN using a novel Ni/Cu scheme

S. H. Liu, J. M. Hwang, Z. H. Hwang, W. H. Hung, H. L. Hwang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, formation of low resistance ohmic contact to p-type GaN using an alloy of Ni/Cu was reported. The Mg doped samples were deposited with Ni (20nm)/Cu (20nm) and then annealed in nitrogen ambient at different annealing temperatures ranging from 400 to 700 °C. A good ohmic contact with a specific contact resistance of 1.31 × 10 -4 Ω cm 2 was obtained when the sample was annealed at 600 °C for 30 s. The decrease of specific contact resistance is attributed to the increased contact area and local electric field, and extraction of hydrogen from the p-type GaN.

Original languageEnglish
Pages (from-to)907-911
Number of pages5
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
Publication statusPublished - 2003 May 15

Fingerprint

Ohmic contacts
Contact resistance
Hydrogen
Nitrogen
Electric fields
Annealing
Temperature

Keywords

  • Metallization
  • Ni/Cu ohmic contact
  • Ohmic contact
  • P-Type GaN

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Liu, S. H., Hwang, J. M., Hwang, Z. H., Hung, W. H., & Hwang, H. L. (2003). Ohmic contact to p-type GaN using a novel Ni/Cu scheme. Applied Surface Science, 212-213(SPEC.), 907-911. https://doi.org/10.1016/S0169-4332(03)00470-7

Ohmic contact to p-type GaN using a novel Ni/Cu scheme. / Liu, S. H.; Hwang, J. M.; Hwang, Z. H.; Hung, W. H.; Hwang, H. L.

In: Applied Surface Science, Vol. 212-213, No. SPEC., 15.05.2003, p. 907-911.

Research output: Contribution to journalArticle

Liu, SH, Hwang, JM, Hwang, ZH, Hung, WH & Hwang, HL 2003, 'Ohmic contact to p-type GaN using a novel Ni/Cu scheme', Applied Surface Science, vol. 212-213, no. SPEC., pp. 907-911. https://doi.org/10.1016/S0169-4332(03)00470-7
Liu, S. H. ; Hwang, J. M. ; Hwang, Z. H. ; Hung, W. H. ; Hwang, H. L. / Ohmic contact to p-type GaN using a novel Ni/Cu scheme. In: Applied Surface Science. 2003 ; Vol. 212-213, No. SPEC. pp. 907-911.
@article{4a625499537b4f5fb76ee0c72647469d,
title = "Ohmic contact to p-type GaN using a novel Ni/Cu scheme",
abstract = "In this paper, formation of low resistance ohmic contact to p-type GaN using an alloy of Ni/Cu was reported. The Mg doped samples were deposited with Ni (20nm)/Cu (20nm) and then annealed in nitrogen ambient at different annealing temperatures ranging from 400 to 700 °C. A good ohmic contact with a specific contact resistance of 1.31 × 10 -4 Ω cm 2 was obtained when the sample was annealed at 600 °C for 30 s. The decrease of specific contact resistance is attributed to the increased contact area and local electric field, and extraction of hydrogen from the p-type GaN.",
keywords = "Metallization, Ni/Cu ohmic contact, Ohmic contact, P-Type GaN",
author = "Liu, {S. H.} and Hwang, {J. M.} and Hwang, {Z. H.} and Hung, {W. H.} and Hwang, {H. L.}",
year = "2003",
month = "5",
day = "15",
doi = "10.1016/S0169-4332(03)00470-7",
language = "English",
volume = "212-213",
pages = "907--911",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "SPEC.",

}

TY - JOUR

T1 - Ohmic contact to p-type GaN using a novel Ni/Cu scheme

AU - Liu, S. H.

AU - Hwang, J. M.

AU - Hwang, Z. H.

AU - Hung, W. H.

AU - Hwang, H. L.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - In this paper, formation of low resistance ohmic contact to p-type GaN using an alloy of Ni/Cu was reported. The Mg doped samples were deposited with Ni (20nm)/Cu (20nm) and then annealed in nitrogen ambient at different annealing temperatures ranging from 400 to 700 °C. A good ohmic contact with a specific contact resistance of 1.31 × 10 -4 Ω cm 2 was obtained when the sample was annealed at 600 °C for 30 s. The decrease of specific contact resistance is attributed to the increased contact area and local electric field, and extraction of hydrogen from the p-type GaN.

AB - In this paper, formation of low resistance ohmic contact to p-type GaN using an alloy of Ni/Cu was reported. The Mg doped samples were deposited with Ni (20nm)/Cu (20nm) and then annealed in nitrogen ambient at different annealing temperatures ranging from 400 to 700 °C. A good ohmic contact with a specific contact resistance of 1.31 × 10 -4 Ω cm 2 was obtained when the sample was annealed at 600 °C for 30 s. The decrease of specific contact resistance is attributed to the increased contact area and local electric field, and extraction of hydrogen from the p-type GaN.

KW - Metallization

KW - Ni/Cu ohmic contact

KW - Ohmic contact

KW - P-Type GaN

UR - http://www.scopus.com/inward/record.url?scp=0038548366&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038548366&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00470-7

DO - 10.1016/S0169-4332(03)00470-7

M3 - Article

AN - SCOPUS:0038548366

VL - 212-213

SP - 907

EP - 911

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - SPEC.

ER -