Ohmic contact to p-type GaN using a novel Ni/Cu scheme

S. H. Liu, J. M. Hwang, Z. H. Hwang, W. H. Hung, H. L. Hwang

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6 Citations (Scopus)

Abstract

In this paper, formation of low resistance ohmic contact to p-type GaN using an alloy of Ni/Cu was reported. The Mg doped samples were deposited with Ni (20nm)/Cu (20nm) and then annealed in nitrogen ambient at different annealing temperatures ranging from 400 to 700 °C. A good ohmic contact with a specific contact resistance of 1.31 × 10 -4 Ω cm 2 was obtained when the sample was annealed at 600 °C for 30 s. The decrease of specific contact resistance is attributed to the increased contact area and local electric field, and extraction of hydrogen from the p-type GaN.

Original languageEnglish
Pages (from-to)907-911
Number of pages5
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
Publication statusPublished - 2003 May 15

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Keywords

  • Metallization
  • Ni/Cu ohmic contact
  • Ohmic contact
  • P-Type GaN

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Liu, S. H., Hwang, J. M., Hwang, Z. H., Hung, W. H., & Hwang, H. L. (2003). Ohmic contact to p-type GaN using a novel Ni/Cu scheme. Applied Surface Science, 212-213(SPEC.), 907-911. https://doi.org/10.1016/S0169-4332(03)00470-7