Numerical simulation of three-dimensional vertically aligned quantum dot array

Weichung Wang, Tsung Min Hwang

Research output: Contribution to journalConference article

Abstract

We study the electronic properties of quantum dot arrays formed by 2 to 12 vertically aligned quantum dots numerically. Numerical schemes in grid points choosing, finite differences, matrix reduction, and large-scale eigenvalue problem solver are discussed. The schemes allow us to compute all the desired energy states and the wave functions efficiently. Numerical experiment results are presented.

Original languageEnglish
Pages (from-to)908-911
Number of pages4
JournalLecture Notes in Computer Science
Volume3516
Issue numberIII
Publication statusPublished - 2005 Sep 30
Event5th International Conference on Computational Science - ICCS 2005 - Atlanta, GA, United States
Duration: 2005 May 222005 May 25

Fingerprint

Quantum Dots
Semiconductor quantum dots
Difference Matrix
Numerical Simulation
Three-dimensional
Electronic Properties
Computer simulation
Large-scale Problems
Wave functions
Electronic properties
Wave Function
Electron energy levels
Numerical Scheme
Eigenvalue Problem
Finite Difference
Numerical Experiment
Grid
Energy
Experiments

Keywords

  • Energy levels
  • Numerical simulation
  • Semiconductor quantum dot array
  • The Schrödinger equation
  • Wave function

ASJC Scopus subject areas

  • Theoretical Computer Science
  • Computer Science(all)

Cite this

Numerical simulation of three-dimensional vertically aligned quantum dot array. / Wang, Weichung; Hwang, Tsung Min.

In: Lecture Notes in Computer Science, Vol. 3516, No. III, 30.09.2005, p. 908-911.

Research output: Contribution to journalConference article

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