Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism

Ting Kuo Kang, Ming Jer Chen, Chuan Hsi Liu, Yih J. Chang, Shou Kong Fan

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This paper presents a quite comprehensive procedure covering both the stress-induced leakage current (SILC) and oxide breakdown, achieved by balancing systematically the modeling and experimental works. The underlying model as quoted in the literature features three key parameters: the tunneling relaxation time τ, the neutral electron trap density Nt, and the trap energy level Et. First of all, 7-nm thick oxide MOS devices with wide range oxide areas are throughly characterized in terms of the optically induced trap filling, the charge-to-breakdown statistics, the gate voltage developments with the time, and the SILC I-V. The former three are involved together with a percolation oxide breakdown model to build Nt explicitly as function of the stress electron fluence. Then the overall tunneling probability is calculated with which a best fitting to SILC I-V furnishes τ of 4.0 × 10-13 s and Et of 3.4 eV. The extracted τ is found to match exactly that extrapolated from existing data. Such striking consistencies thereby provide evidence that inelastic trap-assisted tunneling (ITAT) is indeed the SILC mechanism. Differences and similarities of the involved physical parameters between different studies are compared as well.

Original languageEnglish
Pages (from-to)2317-2322
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume48
Issue number10
DOIs
Publication statusPublished - 2001 Oct 1

Fingerprint

Leakage currents
Oxides
Electron traps
MOS devices
Relaxation time
Electron energy levels
Statistics
Electrons
Electric potential

Keywords

  • Flash
  • Gated-diode
  • Inelastic tunneling
  • MOSFET
  • Oxide breakdown
  • Percolation
  • SILC
  • Stress-induced leakage current
  • Trap-assisted tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism. / Kang, Ting Kuo; Chen, Ming Jer; Liu, Chuan Hsi; Chang, Yih J.; Fan, Shou Kong.

In: IEEE Transactions on Electron Devices, Vol. 48, No. 10, 01.10.2001, p. 2317-2322.

Research output: Contribution to journalArticle

Kang, Ting Kuo ; Chen, Ming Jer ; Liu, Chuan Hsi ; Chang, Yih J. ; Fan, Shou Kong. / Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism. In: IEEE Transactions on Electron Devices. 2001 ; Vol. 48, No. 10. pp. 2317-2322.
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